Abstract-Prospective Beamforming Technologies for Ultra-Massive MIMO in Terahertz Communications: A Tutorial

 

Boyu Ning, Zhongbao Tian, Zhi Chen, Chong Han, Jinhong Yuan, Shaoqian Li

https://arxiv.org/abs/2107.03032

Terahertz (THz) communications with a frequency band 0.1-10 THz are envisioned as a promising solution to the future high-speed wireless communication. Although with tens of gigahertz available bandwidth, THz signals suffer from severe free-spreading loss and molecular-absorption loss, which limit the wireless transmission distance. To compensate the propagation loss, the ultra-massive multiple-input-multiple-output (UM-MIMO) can be applied to generate a high-gain directional beam by beamforming technologies. In this paper, a tutorial on the beamforming technologies for THz UM-MIMO systems is provided. Specifically, we first present the system model of THz UM-MIMO and identify its channel parameters and architecture types. Then, we illustrate the basic principles of beamforming via UM-MIMO and introduce the schemes of beam training and beamspace MIMO for THz communications. Moreover, the spatial-wideband effect and frequency-wideband effect in the THz beamforming are discussed. The joint beamforming technologies in the intelligent-reflecting-surface (IRS)-assisted THz UM-MIMO systems are introduced. Further, we present the corresponding fabrication techniques and illuminate the emerging applications benefiting from THz beamforming. Open challenges and future research directions on THz UM-MIMO systems are finally highlighted.

Abstract-Terahertz Communications (TeraCom): Challenges and Impact on 6G Wireless Systems

Chong Han, Yongzhi Wu, Zhi Chen, Xudong Wang

https://arxiv.org/abs/1912.06040

Terahertz communications are envisioned as a key technology for 6G, which requires 100+ Gbps data rates, 1-millisecond latency, among other performance metrics. As a fundamental wireless infrastructure, the THz communication can boost abundant promising applications, including next-generation WLAN systems like Tera-WiFi, THz wireless backhaul, as well as other long-awaited novel communication paradigms. Serving as a basis of efficient wireless communication and networking design, this paper highlights the key THz channel features and recent advancements in device technologies. In light of these, impact and guidelines on 6G wireless communication and networking are elaborated. We believe the progress of THz technologies is helping finally close the so called THz Gap, and will realize THz communications as a pillar of 6G wireless systems.

Abstract-High-speed efficient terahertz modulation based on tunable collective-individual state conversion within an active 3nm-two dimensional electron gas metasurface

Yuncheng Zhao, Lan Wang, Yaxin Zhang, Shen Qiao, Shixiong Liang, Xilin Zhang, Xiaoqing Guo, Zhihong Feng, Feng Lan, Zhi Chen, Xiaobo Yang, Ziqiang Yang,

https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.9b01273#

Terahertz (THz) modulators are always realized by dynamically manipulating the conversion between different resonant modes within a single unit cell of an active metasurface. In this paper, to achieve real high-speed THz modulation, we present a staggered netlike two-dimensional electron gas (2DEG) nanostructure composite metasurface that has two states: a collective state with massive surface resonant characteristics and an individual state with meta-atom resonant characteristics. By controlling the electron transport of the nanoscale 2DEG with an electrical grid, collective-individual state conversion can be realized in this composite metasurface. Unlike traditional resonant mode conversion confined in meta-units, this state conversion enables the resonant modes to be flexibly distributed throughout the metasurface, leading to a frequency shift of nearly 99% in both the simulated and experimental transmission spectra. Moreover, such a mechanism can effectively suppress parasitic modes and significantly reduce the capacitance of the metasurface. Thereby, this composite metasurface can efficiently control the transmission characteristics of THz waves with high-speed modulations. As a result, 93% modulation depth is observed in the static experiment and modulated sinusoidal signals up to 3 GHz are achieved in the dynamic experiment while the -3dB bandwidth can reach up to 1GHz. This tunable collective-individual state conversion may have great application potential in wireless communication and coded imaging.

Abstract-Terahertz Modulators Based on Silicon Nanotip Array

Zhong-Wei Shi,Xing-Xing Cao,Qi-Ye Wen, Tian-Long Wen, Qing-Hui Yang, Zhi Chen, Wen-Sheng Shi, Huai-Wu Zhang.

http://onlinelibrary.wiley.com/doi/10.1002/adom.201700620/full

As an attractive applications of terahertz (THz) radiation, imaging with THz technique stands at the focus of current interest. THz spatial modulators are key issue for fast imaging with a single detector. Here, for the first time, the silicon nanotip (SiNT) arrays are reported that can be utilized as antireflection layers for the THz wave to achieve a low-loss and spectrally broadband optical-driven THz modulator. Compared with the modulator fabricated with bare silicon, a 2–3-time larger modulation depth is achieved in SiNT modulator. Moreover, it is found that the intrinsic THz transmission of SiNT is as high as 90%, which is much higher than that of bare silicon. The theoretical simulation results reveal that a strong antireflection effect induced from SiNT layer plays a crucial role in enhancing the properties of modulator. The SiNT-based optical-driven THz modulator with low loss and high modulation depth is promising for potential application to THz imaging.

Abstract-Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure

Yaxin Zhang , Shen Qiao , Shixiong Liang , Zhenhua Wu , Ziqiang Yang , Zhihong Feng , Han Sun , Yucong Zhou , Linlin Sun , Zhi Chen , Xianbing Zou , Bo Zhang , Jianhao Hu , Shaoqian Li ,Qin Chen , Ling Li , Gaiqi Xu , Yuncheng Zhao , and Shenggang Liu

Nano Lett., Just Accepted Manuscript

DOI: 10.1021/acs.nanolett.5b00869

Publication Date (Web): April 28, 2015

Copyright © 2015 American Chemical Society

http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b00869

The past few decades have witnessed a substantial increase in terahertz (THz) research. Utilizing THz waves to transmit communication and imaging data has created a high demand for phase and amplitude modulation. However, current active THz devices, including modulators and switches, still cannot meet THz system demands. Double-channel heterostructures, an alternative semiconductor system, can support nano-scale two-dimensional electron gases (2DEGs) with high carrier concentration and mobility and provide a new way to develop active THz devices. In this article, we present a composite metamaterial structure that combines an equivalent collective dipolar array with a double-channel heterostructure to obtain an effective, ultra-fast and all-electronic grid-controlled THz modulator. Electrical control allows for resonant mode conversion between two different dipolar resonances in the active device, which significantly improves the modulation speed and depth. This THz modulator is the first to achieve a 1-GHz modulation speed and 85% modulation depth during real-time dynamic tests. Moreover, a 1.19-rad phase shift was realized. A wireless free-space-modulation THz communication system based on this external THz modulator was tested using 0.2-Gbps eye patterns. Therefore, this active composite metamaterial modulator provides a basis for the development of effective and ultra-fast dynamic devices for THz wireless communication and imaging systems.

Abstract-High-speed and broadband terahertz wave modulators based on large-area graphene field-effect transistors

Qi Mao, Qi-Ye Wen, Wei Tian, Tian-Long Wen, Zhi Chen, Qing-Hui Yang, and Huai-Wu Zhang  »View Authors http://www.opticsinfobase.org/ol/abstract.cfm?uri=ol-39-19-5649 Optics Letters, Vol. 39, Issue 19, pp. 5649-5652 (2014) http://dx.doi.org/10.1364/OL.39.005649

We present a broadband terahertz wave modulator with improved modulation depth and switch speed by cautiously selecting the gate dielectric materials in a large-area graphene-based field-effect transistor (GFET). An ultrathin Al2O3film (∼60  nm) is deposited by an atomic-layer-deposition technique as a high-k gate dielectric layer, which reduces the Coulomb impurity scattering and cavity effect, and thus greatly improves the modulation performance. Our modulator has achieved a modulation depth of 22% and modulation speed of 170 kHz in a frequency range from 0.4 to 1.5 THz, which is a large improvement in comparison to its predecessor of SiO2-based GFET.

© 2014 Optical Society of America

Abstract-High-speed and broadband terahertz wave modulators based on large-area graphene field-effect transistors

Qi Mao, Qi-Ye Wen, Wei Tian, Tian-Long Wen, Zhi Chen, Qing-Hui Yang, and Huai-Wu Zhang  »View Author Affiliations

http://www.opticsinfobase.org/ol/abstract.cfm?uri=ol-39-19-5649

Optics Letters, Vol. 39, Issue 19, pp. 5649-5652 (2014)

We present a broadband terahertz wave modulator with improved modulation depth and switch speed by cautiously selecting the gate dielectric materials in a large-area graphene-based field-effect transistor (GFET). An ultrathin Al2O3film (∼60  nm) is deposited by an atomic-layer-deposition technique as a high-k gate dielectric layer, which reduces the Coulomb impurity scattering and cavity effect, and thus greatly improves the modulation performance. Our modulator has achieved a modulation depth of 22% and modulation speed of 170 kHz in a frequency range from 0.4 to 1.5 THz, which is a large improvement in comparison to its predecessor of SiO2-based GFET.

© 2014 Optical Society of America