Showing posts with label D. V. Fateev. Show all posts
Showing posts with label D. V. Fateev. Show all posts

Tuesday, May 11, 2021

Abstract-Terahertz plasmon amplification in a double-layer graphene structure with direct electric current in hydrodynamic regime

 


I. M. Moiseenko, V. V. Popov, D. V. Fateev, 

https://journals.aps.org/prb/accepted/3b074Of7Pa2Ea210634e99e143a55ddc10d0d1a0b

The possibility of excitation and amplification of terahertz plasmons in a structure containing a layer of graphene with charge carrier drift and a layer of graphene without carrier drift is theoretically investigated. The plasmon excitation in the graphene structure by an incident terahertz electromagnetic wave is calculated in the attenuated total reflection geometry. It is shown that, in graphene with charge carrier drift, it is possible to achieve negative values of the real part of graphene conductivity for the phase velocity of plasmons exceeding the charge carriers drift velocities, which indicates a non-Cherenkov amplification of terahertz plasmons in the double-layer graphene structure for practically achievable direct electric current values. Terahertz amplification originates due to the variation of the carrier mass density in graphene with terahertz electric field. In the case of weak deceleration of terahertz wave incident onto graphene structure, the value of the negative conductivity of graphene does not depend on the direction of the direct current in graphene (only the co-directional and counter-directional currents with respect to the direction of plasmon propagation are considered). This is due to the insignificant spatial dispersion of the hydrodynamic conductivity of graphene in the case of weak deceleration of terahertz waves. The results of this work can be used to create compact terahertz radiation amplifiers operating at room temperature. The investigations of plasmonic properties of graphene structures for amplification, generation, detection and modulation of terahertz (THz) radiation an actively exploring area of nanophotonics in recent years [1-10]. Graphene conductivity in THz frequency range can be described by using a hydrodynamic approach in the case when the frequency of acting electromagnetic field and the electron momentum relaxation rate in graphene is smaller than the frequency of carrier-carrier collisions [11, 12]. The hydrodynamic regime of graphene at THz frequencies is confirmed in experimental works, in which the current vortices in graphene are discovered [13, 14.]. In general, the carrier drift in graphene, the carrier pressure forces, as well as the influence of the Doppler effect in graphene leads to the spatial dispersion of the graphene hydrodynamic conductivity. The Doppler effect results in Cherenkov amplification, which is difficult to achieve in two-dimensional isotropic parabolic materials [15, 16]. The amplification of THz radiation in single-layer and double-layer graphene structures due to the radiative recombination of charge carriers and obtaining the negative dynamic conductivity of graphene by different methods of graphene pumping were investigated [17-19]. However, creating a long-lived inversion in graphene is a difficult task due to the strong non-radiative recombination of charge carriers in graphene [12, 20] and strong heating of the structures by high pumping power. The problem of graphene heating can be solved by using the diffusion pumping of graphene on a black-As substrate [21]. Experimental observation of optical (2.0–3.5 eV range) emission from graphene induced by an intense THz pulse is reported in [22]. An alternative mechanism of amplification of THz radiation in graphene is the Cherenkov plasmon instability, which can occur in graphene when a direct electric current is passed in the plane of graphene [23]. 

Wednesday, April 26, 2017

Abstract-Magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with a lateral asymmetric superlattice


P. Faltermeier, G. V. Budkin, J. Unverzagt, S. Hubmann, A. Pfaller, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Z. Adamus, G. Karczewski, T. Wojtowicz, V. V. Popov, D. V. Fateev, D. A. Kozlov, D. Weiss, S. D. Ganichev

https://journals.aps.org/prb/abstract/10.1103/PhysRevB.95.155442

We report on the observation of magnetic quantum ratchet effect in (Cd,Mn)Te- and CdTe-based quantum well structures with an asymmetric lateral dual grating gate superlattice subjected to an external magnetic field applied normal to the quantum well plane. A dc electric current excited by cw terahertz laser radiation shows 1/B oscillations with an amplitude much larger as compared to the photocurrent at zero magnetic field. We show that the photocurrent is caused by the combined action of a spatially periodic in-plane potential and the spatially modulated radiation due to the near-field effects of light diffraction. Magnitude and direction of the photocurrent are determined by the degree of the lateral asymmetry controlled by the variation of voltages applied to the individual gates. The observed magneto-oscillations with enhanced photocurrent amplitude result from Landau quantization and, for (Cd,Mn)Te at low temperatures, from the exchange enhanced Zeeman splitting in diluted magnetic heterostructures. Theoretical analysis, considering the magnetic quantum ratchet effect in the framework of semiclassical approach, describes quite well the experimental results.
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Sunday, February 14, 2016

Abstract-Terahertz ratchet effects in graphene with a lateral superlattice



P. Olbrich, J. Kamann, M. König, J. Munzert, L. Tutsch, J. Eroms, D. Weiss, Ming-Hao Liu (劉明豪), L. E. Golub, E. L. Ivchenko, V. V. Popov, D. V. Fateev, K. V. Mashinsky, F. Fromm, Th. Seyller, and S. D. Ganichev
Phys. Rev. B 93, 075422 – Published 12 February 2016
Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlattice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by interdigitated comblike dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of “linear” and “circular” ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near-field effects of the light diffraction.
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Sunday, June 21, 2015

Abstract-Noncentrosymmetric plasmon modes and giant terahertz photocurrent in a two-dimensional plasmonic crystal


V. V. Popov, D. V. Fateev, E. L. Ivchenko, and S. D. Ganichev
Phys. Rev. B 91, 235436 – Published 19 June 2015
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.91.235436
We introduce and theoretically study the plasmon-photogalvanic effect in a planar noncentrosymmetric plasmonic crystal containing a homogeneous two-dimensional electron system gated by a periodic metal grating with an asymmetric unit cell. The plasmon-photogalvanic dc current arises due to the two-dimensional electron drag by the noncentrosymmetric plasmon modes excited under normal incidence of terahertz radiation. We show that the collective plasmon modes of the planar plasmonic crystal become strongly noncentrosymmetric in the weak-coupling regime of their anticrossing. A large plasmon wave vector (which is typically by two-three orders of magnitude greater than the terahertz photon wave vector) along with strong near-field enhancement at the plasmon resonance make the plasmonic drag a much stronger effect compared to the photon drag observed in conventional two-dimensional electron systems.
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Wednesday, May 27, 2015

Abstract-Noncentrosymmetric plasmon modes and giant terahertz photocurrent in a two-dimensional plasmonic crystal



We introduce and theoretically study the plasmon-photogalvanic effect in the planar noncentrosymmetric plasmonic crystal containing a homogeneous two-dimensional electron system gated by a periodic metal grating with an asymmetric unit cell. The plasmon-photogalvanic DC current arises due to the two-dimensional electron drag by the noncentrosymmetric plasmon modes excited under normal incidence of terahertz radiation. We show that the collective plasmon modes of the planar plasmonic crystal become strongly noncentrosymmetric in the weak coupling regime of their anticrossing. Large plasmon wavevector (which is typically by two-three orders of magnitude greater than the terahertz photon wavevector) along with strong near-field enhancement at the plasmon resonance make the plasmonic drag a much stronger effect compared to the photon drag observed in conventional two-dimensional electron systems.

Tuesday, July 1, 2014

Abstract-Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector



We report on the detection of terahertz radiation by an on-chip planar asymmetric plasmonicstructure in the frequency region above one terahertz. The detector is based on a field-effect transistor that has a dual grating gate structure with an asymmetric unit cell, which provides a geometrical asymmetry within the structure. Biasing the detector with a dc source-to-drain current in the linear region of the current-voltage characteristic introduces an additional asymmetry (electrical asymmetry) that enhances the detector responsivity by more than one order of magnitude (by a factor of 20) as compared with the unbiased case due to the cooperative effect of the geometrical and electrical asymmetries. In addition to the responsivity enhancement, we report a relatively low noise equivalent power and a peculiar non-monotonic dependence of the responsivity on the frequency, which results from the multi-plasmonic-cavity structure of the device.