Abstract-Flexible terahertz modulators based on graphene FET with organic high-k dielectric layer

Yu-Lian He, Jing-Bo Liu, Tian-Long Wen, Qing-Hui Yang, Zheng Feng, Wei Tan, Xue-Song Li, Qi-Ye Wen, Huai-Wu Zhang

https://iopscience.iop.org/article/10.1088/2053-1591/aadeca

Graphene field-effect-transistor (GFET) based terahertz (THz) modulators usually possess an unfulfilling modulation depth (MD) of 15% ~ 20%. In this work we developed a flexible GFET based THz modulator, where the graphene monolayer is coated with an organic high-K dielectric as the screening layer and an ion-gel layer as the gate. With this exquisite composite modulating structure, the new device possesses a significantly enhanced modulation depth (MD) up to 70% over a broad frequency band, an extremely low insert loss (IL) of 1.3 dB, and unexpected good structural and properties stability. The large intrinsic MD, low IL, as well as its flexibility, render this performance enhanced modulator versatile in fabrication of novel THz devices, such as multi-level modulator, for nonplanar or wearable applications.

Abstract-Semiconductor terahertz spatial modulators with high modulation depth and resolution for imaging applications

Tianlong Wen, Jing Tong, Dai-nan Zhang, Yunqiao Zhu, Qi-Ye Wen, Yuanpeng Li, Huai-Wu Zhang, Yu-Lan Jing,  Zhi-Yong Zhong

https://iopscience.iop.org/article/10.1088/1361-6463/ab146d/pdf

Spatial modulation of terahertz wave enabled by the charge carrier generation-recombination dynamics in semiconductor is promising for terahertz compressive sensing imaging since the modulation is broadband, low-loss and of enough speed (tens of thousands of Hertz). However their performance in terahertz compressive sensing imaging is significantly limited by their inferior modulation depth and resolution. Here silicon was cut into small pieces and packed closely in arrays to shut off the charge carrier diffusion between them and increase the resolution of the terahertz spatial modulator. A monolayer of gold nanoparticles was coated on the silicon surface to enhance the terahertz modulation depth through the enhanced generation of charge carriers by surface plasma. By comparison test, it is found that the gold nanoparticle coated small silicon arrays have improved contrast and resolution for terahertz imaging over the uncoated and coated large pieces of silicon respectively.

Abstract-A novel method to measure dielectric properties of materials in terahertz spectroscopy

• Wei-en Lai^, , 
• Huai-wu Zhang, 
• Yao-hua Zhu, 
• Qi-ye Wen

• State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
• 
  
• http://www.sciencedirect.com/science/article/pii/S0030402613000922

We present a simple method to obtain the optical and dielectric properties of samples without reference measurement in the reflection-type terahertz time-domain spectroscopy. The dielectric properties of the samples of silicon and gallium arsenide were examined. The optical and dielectric properties of the samples were measured through only simple configuration, without the misplacement error. The obtained dielectric functions of the samples in reflection geometry are in good agreement with that predicated by the theory. The main advantage of this method over other methods is its simplicity and accuracy and ease for application of the reflection systems with different incident angle.

Abstract-High-speed and broadband terahertz wave modulators based on large-area graphene field-effect transistors

Qi Mao, Qi-Ye Wen, Wei Tian, Tian-Long Wen, Zhi Chen, Qing-Hui Yang, and Huai-Wu Zhang  »View Authors http://www.opticsinfobase.org/ol/abstract.cfm?uri=ol-39-19-5649 Optics Letters, Vol. 39, Issue 19, pp. 5649-5652 (2014) http://dx.doi.org/10.1364/OL.39.005649

We present a broadband terahertz wave modulator with improved modulation depth and switch speed by cautiously selecting the gate dielectric materials in a large-area graphene-based field-effect transistor (GFET). An ultrathin Al2O3film (∼60  nm) is deposited by an atomic-layer-deposition technique as a high-k gate dielectric layer, which reduces the Coulomb impurity scattering and cavity effect, and thus greatly improves the modulation performance. Our modulator has achieved a modulation depth of 22% and modulation speed of 170 kHz in a frequency range from 0.4 to 1.5 THz, which is a large improvement in comparison to its predecessor of SiO2-based GFET.

© 2014 Optical Society of America

Abstract-High-speed and broadband terahertz wave modulators based on large-area graphene field-effect transistors

Qi Mao, Qi-Ye Wen, Wei Tian, Tian-Long Wen, Zhi Chen, Qing-Hui Yang, and Huai-Wu Zhang  »View Author Affiliations

http://www.opticsinfobase.org/ol/abstract.cfm?uri=ol-39-19-5649

Optics Letters, Vol. 39, Issue 19, pp. 5649-5652 (2014)

We present a broadband terahertz wave modulator with improved modulation depth and switch speed by cautiously selecting the gate dielectric materials in a large-area graphene-based field-effect transistor (GFET). An ultrathin Al2O3film (∼60  nm) is deposited by an atomic-layer-deposition technique as a high-k gate dielectric layer, which reduces the Coulomb impurity scattering and cavity effect, and thus greatly improves the modulation performance. Our modulator has achieved a modulation depth of 22% and modulation speed of 170 kHz in a frequency range from 0.4 to 1.5 THz, which is a large improvement in comparison to its predecessor of SiO2-based GFET.

© 2014 Optical Society of America