Abstract-High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip

 

Hongxin Zeng, Huajie Liang, Yaxin Zhang, Lan Wang, Shixiong Liang, Sen Gong, Zheng Li, Ziqiang Yang, Xilin Zhang, Feng Lan, Zhihong Feng, Yubin Gong, Ziqiang Yang, Daniel M. Mittleman

 

Fig. 1: MFPCC architecture and its high-precision terahertz phase manipulation function.

Fig. 2: Perturbation and phase shift of a single 2DEG-PMU with 0 and 1 states.

https://www.nature.com/articles/s41566-021-00851-6

Direct phase modulation is one of the most urgent and difficult issues in the terahertz research area. Here, we propose a new method employing a two-dimensional electron gas (2DEG) perturbation microstructure unit coupled to a transmission line to realize high-precision digital terahertz phase manipulation. We induce local perturbation resonances to manipulate the phase of guided terahertz waves. By controlling the electronic transport characteristics of the 2DEG using an external voltage, the strength of the perturbation can be manipulated, which affects the phase of the guided waves. This external control permits electronic manipulation of the phase of terahertz waves with high precision, as high as 2−5° in the frequency range 0.26–0.27 THz, with an average phase error of only 0.36°, corresponding to a timing error of only 4 fs. Critically, the average insertion loss is as low as 6.14 dB at 0.265 THz, with a low amplitude fluctuation of 0.5 dB, so the device offers near-ideal phase-only modulation.

Abstract-High-speed efficient terahertz modulation based on tunable collective-individual state conversion within an active 3nm-two dimensional electron gas metasurface

Yuncheng Zhao, Lan Wang, Yaxin Zhang, Shen Qiao, Shixiong Liang, Xilin Zhang, Xiaoqing Guo, Zhihong Feng, Feng Lan, Zhi Chen, Xiaobo Yang, Ziqiang Yang,

https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.9b01273#

Terahertz (THz) modulators are always realized by dynamically manipulating the conversion between different resonant modes within a single unit cell of an active metasurface. In this paper, to achieve real high-speed THz modulation, we present a staggered netlike two-dimensional electron gas (2DEG) nanostructure composite metasurface that has two states: a collective state with massive surface resonant characteristics and an individual state with meta-atom resonant characteristics. By controlling the electron transport of the nanoscale 2DEG with an electrical grid, collective-individual state conversion can be realized in this composite metasurface. Unlike traditional resonant mode conversion confined in meta-units, this state conversion enables the resonant modes to be flexibly distributed throughout the metasurface, leading to a frequency shift of nearly 99% in both the simulated and experimental transmission spectra. Moreover, such a mechanism can effectively suppress parasitic modes and significantly reduce the capacitance of the metasurface. Thereby, this composite metasurface can efficiently control the transmission characteristics of THz waves with high-speed modulations. As a result, 93% modulation depth is observed in the static experiment and modulated sinusoidal signals up to 3 GHz are achieved in the dynamic experiment while the -3dB bandwidth can reach up to 1GHz. This tunable collective-individual state conversion may have great application potential in wireless communication and coded imaging.

Abstract-Room-temperature, low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor

• Hua Qin^1,, 
• Jiandong Sun¹, 
• Shixiong Liang², 
• Xiang Li^1, 3, 
• Xinxin Yang^1, †, 
• Zehao He², 
• Cui Yu²,
• Zhihong Feng^2, , 

• ¹ Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, PR China
• ² National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, Hebei 050051, PR China
• ³ School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123, PR China
• 
  

http://www.sciencedirect.com/science/article/pii/S0008622317301653

We report a room-temperature, low-impedance and high-sensitivity terahertz direct terahertz detector based on bilayer graphene field-effect transistor (GFET). Epitaxially grown on silicon carbide, the bilayer graphene had an as-grown carrier mobility of 3000 cm²/Vs. The source/drain contacts were formed on the freshly cleaned graphene sheet to minimize the contact resistance and served also as terahertz antennas. The gate and the dielectric layer underneath with a length of 145 nm and a gap of 203 nm to the source/drain antennas were formed in a self-alignment process. Although the carrier mobility in the GFET was reduced to about 405 cm²/Vs, the high-quality ohmic contacts and the short graphene channel delivered an overall source-drain resistance less than 203 Ω. A voltage responsivity of 30 V/W and a noise-equivalent power of 51 pW/Hz^1/2were estimated in direct detection at 0.33 THz. By using the GFET detector as a two-terminal detector, i.e., with the gate floating, a transmission-type terahertz imaging was demonstrated. Such a low-impedance GFET detector is ready to be matched to a commercial 50-Ω low-noise radio/microwave frequency amplifier allowing for high-speed homodyne detection and heterodyne detection in a quasi-optical configuration.

Abstract-Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure

Yaxin Zhang , Shen Qiao , Shixiong Liang , Zhenhua Wu , Ziqiang Yang , Zhihong Feng , Han Sun , Yucong Zhou , Linlin Sun , Zhi Chen , Xianbing Zou , Bo Zhang , Jianhao Hu , Shaoqian Li ,Qin Chen , Ling Li , Gaiqi Xu , Yuncheng Zhao , and Shenggang Liu

Nano Lett., Just Accepted Manuscript

DOI: 10.1021/acs.nanolett.5b00869

Publication Date (Web): April 28, 2015

Copyright © 2015 American Chemical Society

http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b00869

The past few decades have witnessed a substantial increase in terahertz (THz) research. Utilizing THz waves to transmit communication and imaging data has created a high demand for phase and amplitude modulation. However, current active THz devices, including modulators and switches, still cannot meet THz system demands. Double-channel heterostructures, an alternative semiconductor system, can support nano-scale two-dimensional electron gases (2DEGs) with high carrier concentration and mobility and provide a new way to develop active THz devices. In this article, we present a composite metamaterial structure that combines an equivalent collective dipolar array with a double-channel heterostructure to obtain an effective, ultra-fast and all-electronic grid-controlled THz modulator. Electrical control allows for resonant mode conversion between two different dipolar resonances in the active device, which significantly improves the modulation speed and depth. This THz modulator is the first to achieve a 1-GHz modulation speed and 85% modulation depth during real-time dynamic tests. Moreover, a 1.19-rad phase shift was realized. A wireless free-space-modulation THz communication system based on this external THz modulator was tested using 0.2-Gbps eye patterns. Therefore, this active composite metamaterial modulator provides a basis for the development of effective and ultra-fast dynamic devices for THz wireless communication and imaging systems.