Abstract-Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

Philipp Hillger, Janusz Grzyb, Ritesh Jain, Ullrich R. Pfeiffer

https://ieeexplore.ieee.org/document/8576551


Traditional terahertz (THz) equipment faces major obstacles in providing the system cost and compactness necessary for widespread deployment of THz applications. Because of this, the field of THz integrated circuit (THz IC) design in CMOS and SiGe HBT technologies has surged in the last decade. An interplay of advances in silicon process technology, design technique, and microelectronic packaging promises to narrow the gap between the requirements and the reality of system cost and performance of THz components. Furthermore, the scalability, reconfigurability, and signal processing features of silicon technology have initiated research in complex THz ICs that expand the functionality of THz systems; this has enabled new applications, methods, and algorithms. This paper reviews the progress in THz IC research and investigates several realizations of THz imaging and sensing applications with silicon-based components regarding their motivation, system performance, and challenges. THz computed tomography, broadband multicolor imaging, high-resolution FMCW radar imaging, subwavelength resolution near-field imaging, and compressed sensing are presented.

Abstract-Design of Quad-Band Terahertz Metamaterial Absorber Using a Perforated Rectangular Resonator for Sensing Applications

Qin Xie, Guangxi Dong, Ben-Xin Wang, Wei-Qing Huang

https://link.springer.com/article/10.1186/s11671-018-2567-5

Quad-band terahertz absorber with single-sized metamaterial design formed by a perforated rectangular resonator on a gold substrate with a dielectric gap in between is investigated. The designed metamaterial structure enables four absorption peaks, of which the first three peaks have large absorption coefficient while the last peak possesses a high Q (quality factor) value of 98.33. The underlying physical mechanisms of these peaks are explored; it is found that their near-field distributions are different. Moreover, the figure of merit (FOM) of the last absorption peak can reach 101.67, which is much higher than that of the first three absorption modes and even absorption bands of other works operated in the terahertz frequency. The designed device with multiple-band absorption and high FOM could provide numerous potential applications in terahertz technology-related fields.