Abstract-Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range

D. V. Kozlov, V. V. Rumyantsev, A. M. Kadykov, M. A. Fadeev, N. S. Kulikov, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, H.-W. Hubers, F. Teppe, S. V. Morozov,

https://link.springer.com/article/10.1134%2FS0021364019100114

The terahertz photoluminescence spectra of HgTe/CdHgTe heterostructure with quantum wells under interband optical excitation with a power of 3 to 300 mW have been studied in the temperature range of 30–100 K. The photoluminescence spectrum includes a band corresponding to quantum energies below the width of the band gap. The position of this band does not change with increasing temperature. This property allows attributing it to the capture of holes by acceptor centers. It has been shown that these acceptor centers are singly ionized mercury vacancies, which are double acceptors. A nonmonotonic dependence of the intensity of a signal of a long-wavelength photoluminescence band on the power of an exciting source has been revealed. A short-wavelength photoluminescence band corresponding to interband transitions appears with an increase in the exciting power. It has been shown that this effect is caused by the saturation of the number of partially ionized mercury vacancies with increasing pump intensity.

Abstract-Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well

S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, C. Consejo, W. Desrat, B. Jouault, W. Knap, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, G. Boissier, E. Tournié, V. I. Gavrilenko, F. Teppe

https://link.springer.com/article/10.1134%2FS0021364019020085

The features of terahertz photoluminescence and magnetoabsorption in magnetic fields up to 16 T in threelayer InAs/GaSb/InAs quantum wells with a band structure corresponding to a “two-dimensional semimetal” are studied. The comparison of the positions and amplitudes of the photoluminescence lines with the theoretical calculations of oscillator strengths for interband and intraband transitions performed using the eight-band Kane Hamiltonian indicates the existence of a nonradiative recombination channel associated with the overlap of the conduction and valence bands. The energies of interband and intraband Landau level transitions observed in the magnetoabsorption spectra are in good agreement with theoretical calculations, which confirms the predicted band structure.

Abstract-Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, G. Boissier, M. Marcinkiewicz, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, V. I. Gavrilenko, C. Consejo, W. Desrat, B. Jouault, W. Knap, E. Tournié,  F. Teppe,

https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.245419

We report on temperature-dependent terahertz spectroscopy of a three-layer InAs/GaSb/InAs quantum well (QW) with inverted-band structure. The interband optical transitions, measured up to 16 T at different temperatures by Landau-level magnetospectroscopy, demonstrate the inverted-band structure of the QW. The terahertz photoluminescence at different temperatures allows us to directly extract the optical gap in the vicinity of the $\Gamma$ point of the Brillouin zone. Our results experimentally demonstrate that the gap in the three-layer QWs is temperature independent and exceeds by four times the maximum band gap available in the inverted InAs/GaSb bilayers.

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Abstract-Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, G. Boissier, M. Marcinkiewicz, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, V. I. Gavrilenko, C. Consejo, W. Desrat, B. Jouault, W. Knap, E. Tournié, and F. Teppe

https://journals.aps.org/prb/accepted/95079Oa7D2d1623e752d64e9057de647e3bf908f7

We report on temperature-dependent terahertz spectroscopy of three-layer InAs/GaSb/InAs quantum well (QW) with inverted band structure. The inter-band optical transitions, measured up to 16~T at different temperatures by Landau level magnetospectroscopy, demonstrate the inverted band structure of the QW. The terahertz photoluminescence at different temperatures allows us directly extracting the optical gap in the vicinity of the $\Gamma$ point of the Brillouin zone. Our results experimentally demonstrate that the gap in the three-layer QWs is temperature-independent and exceeds by four times the maximum band gap available in the inverted InAs/GaSb bilayers.