Abstract-Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well

S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, C. Consejo, W. Desrat, B. Jouault, W. Knap, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, G. Boissier, E. Tournié, V. I. Gavrilenko, F. Teppe

https://link.springer.com/article/10.1134%2FS0021364019020085

The features of terahertz photoluminescence and magnetoabsorption in magnetic fields up to 16 T in threelayer InAs/GaSb/InAs quantum wells with a band structure corresponding to a “two-dimensional semimetal” are studied. The comparison of the positions and amplitudes of the photoluminescence lines with the theoretical calculations of oscillator strengths for interband and intraband transitions performed using the eight-band Kane Hamiltonian indicates the existence of a nonradiative recombination channel associated with the overlap of the conduction and valence bands. The energies of interband and intraband Landau level transitions observed in the magnetoabsorption spectra are in good agreement with theoretical calculations, which confirms the predicted band structure.