Showing posts with label Stéphane Blin. Show all posts
Showing posts with label Stéphane Blin. Show all posts

Tuesday, February 19, 2019

Abstract-Upscaling the output power of a photo-mixing THz source driven by a dual-frequency laser operating on two transverse modes



Mikhaël MyaraBaptiste ChometAlaeddine AbbesArnaud GarnacheStéphane BlinGrégoire BeaudoinIsabelle Sagnes

https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10926/109261E/Upscaling-the-output-power-of-a-photo-mixing-THz-source/10.1117/12.2514721.short?SSO=1

The use of photo-mixing techniques for THz emission offers attractive performances such as tunability and modulation bandwidth, that are suitable for bio-medical sensing and imaging, communications, or security. We will present the state-of-the-art performances of a vertical-external-cavity surface-emitting laser that operates on two transverse modes to ensure a stable continuous-wave and coherent (longitudinal, transverse and polarization) dual-frequency operation. THz emission is subsequently obtained by excitation of an uni-traveling-carrier photodiode (UTC-PD). The stability of the dual-frequency operation is achieved thanks to different types of functionalized surfaces involving the micro-fabrication of integrated III-V absorbing metallic masks or metamaterial phase masks by e-beam lithography. These functionalized surfaces allow to shape the optical and THz performances in terms of power, tunability and coherence. The latter will be specifically detailed in terms of longitudinal coherence, showing a THz frequency noise that is orders of magnitude lower than the optical one thanks to a significant correlation of technical noise. Tunable emission will be demonstrated from 50 GHz up to few THz with a linewidth of 150 kHz (during 3-ms), for a power of 1 W at 260 GHz that is limited by the UTC-PD for an optical excitation at 1064 nm at room temperature. We will discuss on the possibility to improve such a power significantly by taking advantage of the involved high-order transverse mode, offering possible intrinsically coherent networks of photo-emitters, thus paving the way to compact and agile coherent THz sources offering an output power over few mWs at frequencies of 100s of GHz.

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Saturday, November 19, 2016

Abstract-Wide modulation bandwidth terahertz detection in 130 nm CMOS technology


1 ECSE Department, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
2 ECE Department, Ain Shams University, 11566 Cairo, Egypt
3 Institut d’électronique et des Systèmes, UMR 5214 CNRS-Université de Montpellier, 34095 Montpellier, France
4 Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, 34095 Montpellier, France 

Design, manufacturing and measurements results for silicon plasma wave transistors based wireless communication wideband receivers operating at 300 GHz carrier frequency are presented. We show the possibility of Si-CMOS based integrated circuits, in which by: (i) specific physics based plasma wave transistor design allowing impedance matching to the antenna and the amplifier, (ii) engineering the shape of the patch antenna through a stacked resonator approach and (iii) applying bandwidth enhancement strategies to the design of integrated broadband amplifier, we achieve an integrated circuit of the 300 GHz carrier frequency receiver for wireless wideband operation up to/over 10 GHz. This is, to the best of our knowledge, the first demonstration of low cost 130 nm Si-CMOS technology, plasma wave transistors based fast/wideband integrated receiver operating at 300 GHz atmospheric window. These results pave the way towards future large scale (cost effective) silicon technology based terahertz wireless communication receivers.