Abstract-Towards realization of quantitative atmospheric and industrial gas sensing using THz wave electronics

Aniket Tekawade, Timothy E. Rice, Matthew A. Oehlschlaeger, Muhammad Waleed Mansha,  Kefei Wu, Mona M. Hella, Ingrid Wilke

https://link.springer.com/article/10.1007/s00340-018-6974-1

The potential of THz wave electronics for miniaturized non-intrusive sensors for atmospheric, environmental, and industrial gases is explored. A THz wave spectrometer is developed using a radio-frequency multiplier source and a Schottky-diode detector. Spectral absorption measurements were made in a gas cell within a frequency range of 220–330 GHz at room temperature and subatmospheric pressures. Measurements are reported for pure acetonitrile (CH3CN), methanol (CH3OH), and ethanol (C2H5OH) vapors at 5 and 10 Torr and for methanol dilute in the air (0.75–3.0 mol%) at a pressure of 500 Torr. An absorbance noise floor of 10−3was achieved for a single 10 s scan of the 220–330 GHz frequency domain. Measured absorption spectra for methanol/air agree well at collisional-broadened conditions with spectral simulations carried out using literature spectroscopic parameters. In contrast to the previous submillimeter wave research that has focused on spectral absorbance at extremely low pressures (mTorr), where transitions are in the Doppler limit, and the present study illustrates the applicability of THz electronics for gas sensing at pressures approaching those found in atmospheric and industrial environments.

Abstract-Wide modulation bandwidth terahertz detection in 130 nm CMOS technology

Shamsun Nahar1, Marwah Shafee2, Stéphane Blin3, Annick Pénarier3, Philippe Nouvel3, Dominique Coquillat4, Amr M.E. Safwa2, Wojciech Knap4a and Mona M. Hella1

1 ECSE Department, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
2 ECE Department, Ain Shams University, 11566 Cairo, Egypt
3 Institut d’électronique et des Systèmes, UMR 5214 CNRS-Université de Montpellier, 34095 Montpellier, France
4 Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, 34095 Montpellier, France 

a e-mail: knap.wojciech@gmail.com 

http://www.epjap.org/articles/epjap/abs/2016/11/ap160302/ap160302.html

Design, manufacturing and measurements results for silicon plasma wave transistors based wireless communication wideband receivers operating at 300 GHz carrier frequency are presented. We show the possibility of Si-CMOS based integrated circuits, in which by: (i) specific physics based plasma wave transistor design allowing impedance matching to the antenna and the amplifier, (ii) engineering the shape of the patch antenna through a stacked resonator approach and (iii) applying bandwidth enhancement strategies to the design of integrated broadband amplifier, we achieve an integrated circuit of the 300 GHz carrier frequency receiver for wireless wideband operation up to/over 10 GHz. This is, to the best of our knowledge, the first demonstration of low cost 130 nm Si-CMOS technology, plasma wave transistors based fast/wideband integrated receiver operating at 300 GHz atmospheric window. These results pave the way towards future large scale (cost effective) silicon technology based terahertz wireless communication receivers.