Abstract-A 177–205 GHz 249 mW CMOS-Based Integer-N Frequency Synthesizer Module for Planetary Exploration

Adrian Tang, Yanghyo Kim,   Theodore Reck, Yiwu Tang,  Yinuo Xu, Goutam Chattopadhyay,   Brian Drouin,  Imran Mehdi,

http://ieeexplore.ieee.org/document/8246534/

This letter discusses the development of a 177–205 GHz CMOS synthesizer module to support planetary science THz instrumentation. The developed synthesizer chip employs a CMOS system-on-chip device containing a 50 GHz phase-locked loop with programmable divider and both 100 and 200 GHz frequency doublers to provide the output carrier. The chip also contains a power sensor for calibration of output power and a dosimeter and thermometer for environmental monitoring of radiation and temperature. The chip is integrated into a board with a microcontroller and USB interface for providing frequency commands and sensor readback. The module is shown to deliver at least 10 μW across the 177–205 GHz lock range while consuming 249 mW of dc power.

Abstract-THz Diode Technology: Status, Prospects, and Applications

Imran Mehdi,  Jose V. Siles,   Choonsup Lee,  Erich Schlecht,

http://ieeexplore.ieee.org/document/7835091/


Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes continue to be one of the most useful THz devices. As a low-parasitic device that operates well into the THz range, Schottky diodes provide useful detection and power generation for a number of practical applications. Mixers and multipliers, working as high as ~3 THz, have already been demonstrated. This paper reviews the current status of diode technology, detailing some of the different ways for fabricating THz chips. An overview regarding the current state of technology and performance for THz frequency multipliers and mixers is presented, along with applications enabled by these diodes.

United States Patent 9512863-Silicon alignment pins: an easy way to realize a wafer-to-wafer alignment

United States Patent 9512863
Inventors:
Jung-kubiak, Cecile (Pasadena, CA, US) 
Reck, Theodore (Pasadena, CA, US) 
Thomas, Bertrand (Bonn, DE) 
Lin, Robert H. (Chino, CA, US) 
Peralta, Alejandro (Huntington Beach, CA, US) 
Gill, John J. (La Crescenta, CA, US) 
Lee, Choonsup (La Palma, CA, US) 
Siles, Jose V. (Pasadena, CA, US) 
Toda, Risaku (Glendale, CA, US) 
Chattopadhyay, Goutam (Pasadena, CA, US) 
Cooper, Ken B. (Glendale, CA, US) 
Mehdi, Imran (South Pasadena, CA, US)

http://www.freepatentsonline.com/9512863.html 

A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Abstract-Terahertz antennas with silicon micromachined front-end

Goutam Chattopadhyay, Theodore Reck, Cecile Kubiack-Jung, Lee Choonsup,  Jose Vincente Siles,
Naser Chahat, Ken Cooper, T. Erich Schlecht,  Maria Alonso del Piño, Imran Mehdi,

http://biblioteca.universia.net/html_bura/ficha/params/title/terahertz-antennas-with-silicon-micromachined-front-end/id/60405055.html

Increasingly, terahertz systems are being used for multi-pixel receivers for different applications from mapping the star-forming regions of galaxies to stand-off radar imaging. Since microstrip patch antennas are too lossy and corrugated horn antenna arrays are difficult to machine at terahertz frequencies, suitable antenna array designs have been one of the key area of research for this field. Moreover, silicon micromachined waveguide housing for front-end integration is becoming very popular for multi-pixel terahertz instruments. This paper describes multi-pixel terahertz instruments with silicon-micromachined front-end and discusses design challenges for integrating terahertz antennas with such systems.