Abstract-New developments for integrated Schottky receivers in the terahertz regime (Conference Presentation)

Jonathan Hoh,  Christopher Groppi,  Jose V. Siles,  Robert H. Lin,  Philip Mauskopf, Choonsup Lee,  Phil Putman,  Adrian J. Tang,

https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10708/1070817/New-developments-for-integrated-Schottky-receivers-in-the-terahertz-regime/10.1117/12.2312927.short?SSO=1

Recent advances in small satellite technology now allow us to consider their use for astrophysics and other remote sensing applications. One wavelength regime of intense interest to astrophysics is the terahertz portion of the electromagnetic spectrum as this is where water vapor and molecular oxygen lie. Water lines at 557 GHz and the 1100-1200 GHz band are excellent diagnostics of water vapor in the interstellar medium, the Earth’s atmosphere and the atmospheres of other planetary bodies. Here we present the preliminary results of a low-mass, low-power highly integrated Schottky diode based coherent receiver system suitable for deployment on cubesats or other small satellite platforms. The current state of the art coherent Schottky receivers are too large to consider deploying on any smaller form of space-based satellite. Using novel packaging methods, we have taken already existing cutting-edge modular 520-600 GHz receivers and packaged them into an integrated system with a volume and power consumption significantly smaller than the state of the art. We also present the designs of a similar integrated receiver for the first excited state of water vapor operating at the 1040-1200 GHz range. Further research will be spent exploring whether we can use passively cooling technologies to better enhance the performance of these Schottky receivers.

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Abstract-Interconnect and packaging technologies for terahertz communication systems

 Goutam Chattopadhyay,Theodore Reck, Cecile Jung-Kubiak, Maria Alonso-delPino, Choonsup Lee,

https://ieeexplore.ieee.org/document/7928794/

Using newly developed silicon micromachining technology that enables low-loss and highly integrated packaging 
solutions, we are developing vertically stacked transmitters and receivers at terahertz frequencies that can be used for communication and other terahertz systems. Although there are multiple ways to address the problem of interconnect and packaging solutions at these frequencies, such as system-on-package (SOP), multi-chip modules (MCM), substrate integrated waveguide (SIW), liquid crystal polymer (LCP) based multilayer technologies, and others, we show that deep reactive ion etching (DRIE) based silicon micromachining with vertical integration allows the most effective solutions at terahertz frequencies.

Abstract-THz Diode Technology: Status, Prospects, and Applications

Imran Mehdi,  Jose V. Siles,   Choonsup Lee,  Erich Schlecht,

http://ieeexplore.ieee.org/document/7835091/


Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes continue to be one of the most useful THz devices. As a low-parasitic device that operates well into the THz range, Schottky diodes provide useful detection and power generation for a number of practical applications. Mixers and multipliers, working as high as ~3 THz, have already been demonstrated. This paper reviews the current status of diode technology, detailing some of the different ways for fabricating THz chips. An overview regarding the current state of technology and performance for THz frequency multipliers and mixers is presented, along with applications enabled by these diodes.

Abstract-Interconnect and packaging technologies for terahertz communication systems

Goutam Chattopadhyay, Theodore Reck,  Cecile Jung-Kubiak,   Maria Alonso-delPino, 
Choonsup Lee

http://ieeexplore.ieee.org/document/7928794/

Using newly developed silicon micromachining technology that enables low-loss and highly integrated packaging solutions, we are developing vertically stacked transmitters and receivers at terahertz frequencies that can be used for communication and other terahertz systems. Although there are multiple ways to address the problem of interconnect and packaging solutions at these frequencies, such as system-on-package (SOP), multi-chip modules (MCM), substrate integrated waveguide (SIW), liquid crystal polymer (LCP) based multilayer technologies, and others, we show that deep reactive ion etching (DRIE) based silicon micromachining with vertical integration allows the most effective solutions at terahertz frequencies.

Abstract-Micromachined Packaging for Terahertz Systems

Goutam Chattopadhyay ;  Theodore Reck ;  Choonsup Lee ;  Cecile Jung-Kubiak

http://ieeexplore.ieee.org/document/7835145/

Micromachined packaging is emerging as the best choice for development of terahertz multipixel heterodyne array instruments and other advanced terahertz systems. Traditional computer numerically controlled (CNC) metal machining can still be used for component and simple single-pixel receiver fabrication but falls short when highly compact and integrated systems are needed. Several micromachining methods have shown potential at these frequencies with permanent thick-resists, thick-resist electroforming and deep reactive ion etching (DRIE) of silicon micromachining are discussed in detail. These techniques use photolithographic techniques to produce features accurate to 3 μm or less. Silicon micromachining and electroforming offers the additional advantage of vertical stacking of components, enabling higher circuit densities for these waveguide-based components. To demonstrate these capabilities several integrated systems are discussed.