Abstract-Terahertz Nanoprobing of Semiconductor Surface Dynamics

Geunchang Choi, Young-Mi Bahk, Taehee Kang, Yoojin Lee, Byung Hee Son, Yeong Hwan Ahnn,  Minah Seo, Dai-Sik Kim,

http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03289

Most semiconductors have surface dynamics radically different from its bulk counterpart due to surface defect, doping level, and symmetry breaking. Because of the technical challenge of direct observation of the surface carrier dynamics, however, experimental studies have been allowed in severely shrunk structures including nanowires, thin films, or quantum wells where the surface-to-volume ratio is very high. Here, we develop a new type of terahertz (THz) nanoprobing system to investigate the surface dynamics of bulk semiconductors, using metallic nanogap accompanying strong THz field confinement. We observed that carrier lifetimes of InP and GaAs dramatically decrease close to the limit of THz time resolution (∼1 ps) as the gap size decreases down to nanoscale and that they return to their original values once the nanogap patterns are removed. Our THz nanoprobing system will open up pathways toward direct and nondestructive measurements of surface dynamics of bulk semiconductors

Abstract-Terahertz nano probing of semiconductor surface dynamics

Geunchang Choi, Young-Mi Bahk, Taehee Kang, Yoojin Lee, Byung Hee Son, Yeong Hwan Ahn, Minah Seo, and Dai-Sik Kim

http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b03289

Most semiconductors have surface dynamics radically different from its bulk counterpart due to surface defect, doping level, and symmetry breaking. Due to the technical challenge of direct observation of the surface carrier dynamics, however, experimental studies have been allowed in severely shrunk structures including nanowires, thin films, or quantum wells where the surface-to-volume ratio is very high. Here, we develop a new type of terahertz (THz) nano probing system to investigate the surface dynamics of bulk semiconductors, using metallic nano gap accompanying strong THz field confinement. We observed that carrier lifetimes of InP and GaAs dramatically decrease close to the limit of THz time resolution (~1 ps) as the gap size decreases down to nano scale, and that they return to their original values once the nano gap patterns are removed. Our THz nano probing system will open up pathways towards direct, and nondestructive measurements of surface dynamics of bulk semiconductors

Abstract-Terahertz-triggered phase transition and hysteresis narrowing in a nanoantenna patterned vanadium dioxide film

ZACHARY J. THOMPSON, Andrew J. Stickel, YOUNG-GYUN JEONG, SANGHOON HAN, BYUNG HEE SON, MICHAEL J. PAUL, BYOUNGHWAK LEE, ALI MOUSAVIAN, GIWAN SEO, Hyun-Tak Kim, Yun-Shik Lee, and Dai-Sik Kim

Nano Lett., Just Accepted Manuscript

DOI: 10.1021/acs.nanolett.5b01970

Publication Date (Web): August 24, 2015

Copyright © 2015 American Chemical Society

http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b01970

We demonstrate that high-field THz pulses trigger transient insulator-to-metal transition in a nanoantenna patterned vanadium dioxide thin film. THz transmission of vanadium dioxide instantaneously decreases in the presence of strong THz fields. The transient THz absorption indicates that strong THz fields induce electronic insulator-to-metal transition without causing a structural transformation. The transient phase transition is activated on the sub-cycle time scale during which the THz pulse drives the electron distribution of vanadium dioxide far from equilibrium and disturb the electron correlation. The strong THz fields lower the activation energy in the insulating phase. The THz-triggered insulator-to-metal transition gives rise to hysteresis loop narrowing, while lowering the transition temperature both for heating and cooling sequences. THz nanoantennas enhance the field-induced phase transition by intensifying the field strength and improve the detection sensitivity via antenna resonance. The experimental results demonstrate a potential that plasmonic nanostructures incorporating vanadium dioxide can be the basis for ultrafast, energy-efficient electronic and photonic devices.