Leonardo Viti, David G. Purdie, Antonio Lombardo, Andrea C. Ferrari, Miriam S. Vitiello
https://arxiv.org/abs/2004.10011
Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < nWHz−1/2) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~
10−11), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 kBμm−2) electronic specific heat of high mobility (> 50000 cm2V−1s−1) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP ≤ 160 pWHz−1/2), fast response time (≤3.3ns) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date.
We report a THz reflectarray metasurface which uses graphene as active element to achieve beam steering, shaping and broadband phase modulation. This is based on the creation of a voltage controlled reconfigurable phase hologram, which can impart different reflection angles and phases to an incident beam, replacing bulky and fragile rotating mirrors used for terahertz imaging. This can also find applications in other regions of the electromagnetic spectrum, paving the way to versatile optical devices including light radars, adaptive optics, electro-optical modulators and screens.
Davide Spirito, Dominique Coquillat, Sergio L. De Bonis, Antonio Lombardo, Matteo Bruna, Andrea C. Ferrari, Vittorio Pellegrini, Alessandro Tredicucci, Wojciech Knap, Miriam S. Vitiello
http://arxiv.org/abs/1312.3737
We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2V/W(1.3mA/W) and a noise equivalent power ∼2×10−9W/Hz−1/2 in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.