M Marcinkiewicz1, F Teppe1, C Consejo1, N Dyakonova1, W Desrat1, D Coquillat1, S Ruffenach1, W Knap1, N N Mikhailov2, S A Dvoretskii2
Published under licence by IOP Publishing Ltd • , ,
http://iopscience.iop.org/article/10.1088/1742-6596/647/1/012037/metaWe report terahertz measurements on bulk HgCdTe crystals at the semiconductor- to-semimetal topological transition and InAs/GaSb inverted band structure quantum well. We show that physical parameters of these narrow gap systems driven in specific topological phases can be efficiently extracted by means of terahertz photoconductivity studies.
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