Abstract-Terahertz studies of 2D and 3D topological transitions

M Marcinkiewicz1, F Teppe1, C Consejo1, N Dyakonova1, W Desrat1, D Coquillat1, S Ruffenach1, W Knap1, N N Mikhailov2, S A Dvoretskii2

Published under licence by IOP Publishing Ltd • Journal of Physics: Conference Series, Volume 647, conference 1

http://iopscience.iop.org/article/10.1088/1742-6596/647/1/012037/meta

We report terahertz measurements on bulk HgCdTe crystals at the semiconductor- to-semimetal topological transition and InAs/GaSb inverted band structure quantum well. We show that physical parameters of these narrow gap systems driven in specific topological phases can be efficiently extracted by means of terahertz photoconductivity studies.