Abstract-Tunable hybridization induced transparency for efficient terahertz sensing

Zhanghua Han, Alana Mauluidy Soehartono, Bobo Gu, Xunbin Wei, Ken-Tye Yong, and Yuechun Shi

Fig. 1 (a) Schematic of the HIT effect; (b) Top view of the layout of the coupled InSb rods.

https://www.osapublishing.org/oe/abstract.cfm?uri=oe-27-6-9032

Hybridization induced transparency (HIT) resulting from the coupling between the material absorption resonance and the artificial structure (metamaterial) resonance provides an effective means of enhancing the sensitivity in the terahertz spectroscopic technique-based sensing applications. However, the application of this method is limited by the versatility to the samples with different volumes, because the samples usually have a refractive index larger than unity and their presence with different thicknesses will lead to a shift of the structure resonance, mismatching the material absorption. In this work, we demonstrate that by using InSb coupled rod structures, whose electromagnetic response in the terahertz band can be easily controlled by using ambient parameters like the temperature or magnetic field, the HIT effect can be easily tuned so that without the needs to change the rod geometry, one can realize efficient terahertz sensing with different sample thickness.

© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Recent developments in terahertz sensing technology

Michael Shur

Rensselaer Polytechnic Institute (United States)

Proc. SPIE 9836, Micro- and Nanotechnology Sensors, Systems, and Applications VIII, 98362Q (May 25, 2016); doi:10.1117/12.2218682

http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2526312

Terahertz technology has found numerous applications for the detection of biological and chemical hazardous agents, medical diagnostics, detection of explosives, providing security in buildings, airports, and other public spaces, shortrange covert communications (in the THz and sub-THz windows), and applications in radio astronomy and space research. The expansion of these applications will depend on the development of efficient electronic terahertz sources and sensitive low-noise terahertz detectors. Schottky diode frequency multipliers have emerged as a viable THz source technology reaching a few THz. High speed three terminal electronic devices (FETs and HBTs) have entered the THz range (with cutoff frequencies and maximum frequencies of operation above 1 THz). A new approach called plasma wave electronics recently demonstrated an efficient terahertz detection in GaAs-based and GaN-based HEMTs and in Si MOS, SOI, FINFETs and in FET arrays. This progress in THz electronic technology has promise for a significant expansion of THz applications.
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