Abstract-Analytical Model of Double Barrier THz Rectifier

Fabrizio Palma,  OrcID,  Rosario Rao

http://www.mdpi.com/2504-3900/1/4/279

The application of the new structure to the complex field of THz receivers requires the availability of an analytical model, reliable and able to highlight the dependence on the parameters of the physical structure. We present a model of the rectification capability of the double barrier Terahertz radiation (THz) detector, a CMOS compatible structurer. The model is based on the hydrodynamic semiconductor equations; solved in the small signal approximation. The model highlights the high frequency dynamics of carriers in the structure; and furnishes new insight on the origin of the self-mixing rectification process.

Abstract-CMOS Technology Integrated Terahertz Rectifier

Rosario Rao, Giovanni De Amicis, Andrea Del Monte, Fabrizio Palma,

http://www.mdpi.com/2504-3900/1/4/344

We present new developments of CMOS compatible direct conversion terahertz detector operating at room temperature. The rectenna consists of an integrated antenna, realized on the surface of the integrated circuit and connected to a nanometric metallic whisker at one of its edges. The rectifying device can be obtained introducing just minor modifications of the charge storage well in conventional CMOS active pixel image sensor devices, making the proposed solution easy to integrate with existing imaging systems. In the paper we present technological developments of the rectifier structure, realized with minor changes from a standard 0.15 µm technology node. We also present the study of a patch antenna which can be directly integrated on the chip.