Abstract-Metrology of Complex Refractive Index for Solids in the Terahertz Regime Using Frequency Domain Spectroscopy

S. R. Chick, B. Murdin,  G. Matmon, M Naftaly,

https://arxiv.org/ftp/arxiv/papers/1805/1805.03590.pdf

Frequency domain spectroscopy allows an experimenter to establish optical properties of solids in a wide frequency band including the technically challenging 10 𝑇𝐻𝑧 region, and in other bands enables metrological comparison between competing techniques. We advance a method for extracting the optical properties of high-index solids using only transmission-mode frequency domain spectroscopy of plane-parallel Fabry-Perot optical flats. We show that different data processing techniques yield different kinds of systematic error, and that some commonly used techniques have inherent systematic errors which are underappreciated. We use model datasets to cross-compare algorithms in isolation from experimental errors, and propose a new algorithm which has qualitatively different systematic errors to its competitors. We show that our proposal is more robust to experimental non-idealities such as noise or apodization, and extract the complex refractive index spectrum of crystalline silicon as a practical example. Finally, we advance the idea that algorithms are complementary rather than competitive, and should be used together as part of a toolbox for better metrology

Abstract-Photo-conductive detection of continuous THz waves via manipulated ultrafast process in nanostructures

Kiwon Moon, Eui Su Lee, Il-Min Lee, Dong Woo Park, Kyung Hyun Parka,

http://aip.scitation.org/doi/abs/10.1063/1.5008790

Time-domain and frequency-domain terahertz (THz) spectroscopy systems often use materials fabricated with exotic and expensive methods that intentionally introduce defects to meet short carrier lifetime requirements. In this study, we demonstrate the development of a nano-photomixer that meets response speed requirements without using defect-incorporated, low-temperature-grown (LTG) semiconductors. Instead, we utilized a thin InGaAs layer grown on a semi-insulating InP substrate by metal-organic chemical vapor deposition (MOCVD) combined with nano-electrodes to manipulate local ultrafast photo-carrier dynamics via a carefully designed field-enhancement and plasmon effect. The developed nano-structured photomixer can detect continuous-wave THz radiation up to a frequency of 2 THz with a peak carrier collection efficiency of 5%, which is approximately 10 times better than the reference efficiency of 0.4%. The better efficiency results from the high carrier mobility of the MOCVD-grown InGaAs thin layer with the coincidence of near-field and plasmon-field distributions in the nano-structure. Our result not only provides a generally applicable methodology for manipulating ultrafast carrier dynamics by means of nano-photonic techniques to break the trade-off relation between the carrier lifetime and mobility in typical LTG semiconductors but also contributes to mass-producible photo-conductive THz detectors to facilitate the widespread application of THz technology.