Abstract-Electrically Tunable Broadband Terahertz Absorption with Hybrid-Patterned Graphene Metasurfaces

Longfang Ye,  Xin Chen, Guoxiong Cai , Jinfeng Zhu,  Na Liu, Qing Huo Liu

http://www.mdpi.com/2079-4991/8/8/562

We numerically demonstrate a broadband terahertz (THz) absorber that is based on a hybrid-patterned graphene metasurface with excellent properties of polarization insensitivity, wide-angle, and active tunability. Our design is made up of a single-layer graphene with periodically arranged hybrid square/disk/loop patterns on a multilayer structure. We find that broadband absorption with 90% terahertz absorbance and the fractional bandwidth of 84.5% from 1.38 THz to 3.4 THz can be achieved. Because of the axisymmetric configuration, the absorber demonstrates absolute polarization independence for both transverse electric (TE) and transverse magnetic (TM) polarized terahertz waves under normal incidence. We also show that a bandwidth of 60% absorbance still remains 2.7 THz, ranging from 1.3 THz to 4 THz, for a wide incident angle ranging from 0° to 60°. Finally, we find that by changing the graphene Fermi energy from 0.7 eV to 0 eV, the absorbance of the absorbers can be easily tuned from more than 90% to lower than 20%. The proposed absorber may have promising applications in terahertz sensing, detecting, imaging, and cloaking

Abstract-Broadband Tunable THz Absorption with Singular Graphene Metasurfaces

Emanuele Galiffi, John B. Pendry, and Paloma A. Huidobro

http://pubs.acs.org/doi/abs/10.1021/acsnano.7b07951?journalCode=ancac3

By exploiting singular spatial modulations of the graphene conductivity, we design a broadband, tunable THz absorber whose efficiency approaches the theoretical upper bound for a wide absorption band with a fractional bandwidth of 185\%. Strong field enhancement is exhibited by the modes of this extended structure, which is able to excite a wealth of high order surface plasmons, enabling deeply subwavelength focussing of incident THz radiation. Previous studies have shown that the conductivity can be modulated at GHz frequencies, which might lead to the development of efficient high speed broadband switching by an atomically thin layer.

Abstract-Broadband terahertz absorption enabled by coating an ultrathin antireflection film on doped semiconductor

Hongxing Wu, Fenghua Shi, and Yihang Chen
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-18-20663

We show that perfect absorption of terahertz wave can be achieved in a compact system where an ultrathin film of lossless dielectric is coated on a doped semiconductor substrate. Due to the nontrivial reflection phase shift at the interface between the two media, strong resonant behavior and the concomitant antireflection occur at wavelengths that are much larger than the thickness of the dielectric film, resulting in strong absorption of the incident wave in a wide frequency range. Using this mechanism, we design a broadband terahertz absorber by coating a Ge film on a highly doped GaAs substrate. We show that such a system not only has a perfect absorption peak, but also exhibits high absorptance (over 0.9) within a fractional bandwidth of over 20%. By varying the free carrier density in the GaAs substrate, the central frequency of the absorption band can be tuned from 1.79 to 2.69 THz. In addition, the absorption performance of the proposed system is shown to be insensitive to both incident angle and polarization. Our results offer a low-cost way for the design of absorption-based THz devices.

© 2016 Optical Society of America

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