Abstract-A Stereolithographically Fabricated Polymethacrylate Broadband THz Absorber

Serang Park, Zackery Z. Clark, Yanzeng Li, Michael McLamb, Tino Hofmann

https://arxiv.org/abs/1909.13662

Additive manufactured THz optics have been introduced as an efficient alternative to their commercial counterparts. Among various additive manufacturing methods, stereolithography provides superior spatial resolution and surface finish. However, examples of stereolithographically fabricated components for THz applications are still scarce. In this paper, we report on the fabrication process and performance of a stereolithographically fabricated broadband absorber for the THz spectral range. Simple THz transmission experiments were carried out for the absorber and bulk reference samples. The experimental results indicated that the fabricated absorber effectively absorbs incident signal in the investigated THz spectral range.

Abstract-Broadband terahertz absorber based on multi-band continuous plasmon resonances in geometrically gradient dielectric-loaded graphene plasmon structure

Jiawen Yang, Zhihong Zhu, Jianfa Zhang, Chucai Guo, Wei Xu, Ken Liu, Xiaodong Yuan,  Shiqiao Qin

https://www.nature.com/articles/s41598-018-21705-2

We propose a broadband terahertz absorber consisting of nonstructured graphene loaded with arrays of elliptic dielectric cylinders. The relative bandwidth for the absorption above 90% reaches about 65%. The working mechanism of broad bandwidth mainly comes from two aspects. One is that the nonstructured graphene loaded with elliptic dielectric cylinders provides multiple discrete graphene plasmon resonances with large relative frequency interval. The other is that, for each discrete resonance, there exists a set of continuous plasmon resonances because the width of the dielectric structure varies continuously and gradiently. The broadband terahertz absorber we demonstrate here, based on geometrically gradient dielectric structures and nonstructured graphene, avoids the graphene processing, which shows great potential applications in related devices.