Abstract-Magnetic Modulation of Terahertz Waves via Spin-Polarized Electron Tunneling Based on Magnetic Tunnel Junctions

Zuanming Jin, Jugeng Li, Wenjie Zhang, Chenyang Guo, Caihua Wan, Xiufeng Han, Zhenxiang Cheng, Chao Zhang, Alexey V. Balakin, Alexander P. Shkurinov, Yan Peng, Guohong Ma, Yiming Zhu, Jianquan Yao, and Songlin Zhuang

https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.14.014032

Magnetic tunnel junctions (MTJs) are a key technology in modern spintronics because they are the basis of read-heads of modern hard disk drives, nonvolatile magnetic random access memories, and sensor applications. In this paper, we demonstrate that tunneling magnetoresistance can influence terahertz (THz) wave propagation through a MTJ. In particular, various magnetic configurations between parallel state and antiparallel state of the magnetizations of the ferromagnetic layers in the MTJ have the effect of changing the conductivity, making a functional modulation of the propagating THz electromagnetic fields. Operating in the THz frequency range, a maximal modulation depth of 60% is reached for the parallel state of the MTJ with a thickness of 77.45 nm, using a magnetic field as low as 30 mT. The THz conductivity spectrum of the MTJ is governed by spin-dependent electron tunneling. It is anticipated that the MTJ device and its tunability scheme will have many potential applications in THz magnetic modulators, filtering, and sensing.

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Abstract-Terahertz time-domain spectroscopy for magnonics and magnetotransport

Zuanming Jin, Xiumei Liu, Shunnong Zhang, Wanying Zhao, Xian Lin, Zongzhi Zhang, Chao Jin, Shixun Cao, Zhenxiang Cheng, Guohong Ma, Jianquan Yao,

https://www.osapublishing.org/abstract.cfm?uri=ISUPTW-2018-ThD2

Terahertz (THz) time-domain spectroscopy can be used to investigate the spintronic effects, such as low-energy magnons and magnetotransports, in the ultrafast operation regime, sub-picosecond time scale and/or terahertz frequency range.

© 2018 OSA

Abstract-Terahertz broadband modulation in a biased BiFeO3/Si heterojunction

Xiankuan Liu, Zeyu Zhang, Xian Lin, Kailin Zhang, Zuanming Jin, Zhenxiang Cheng, and Guohong Ma

https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-23-26618

A new terahertz (THz) modulator based on bias-driven carrier conductivity change in a heterojunction was proposed. BiFeO3 film and silicon were selected as building blocks for fabricating the THz modulator. THz nonlinear transmission as a function of bias voltage was studied systematically. THz peak transmission as a function of bias shows a similar tendency as the current-voltage response of the heterojunction: the forward bias leads to the exponential enhancement of THz transmission, and in contrast, the reverse bias shows no observable changes in THz transmission. The modulation depth and modulation bandwidth of THz pulse can reach up to 42% and 1.0 THz with forward bias of 4.8 V, respectively. The observed bias dependent THz transmission in the BFO/Si heterojunction is well-interpreted by the proposed model: the diffused carriers across the heterojunction are localized in BFO thin film with applied forward bias. Our finding provides great potential for applications in designing all electrical broadband THz modulators.

© 2016 Optical Society of America

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Abstract-Terahertz probes of magnetic field induced spin reorientation in YFeO3 single crystal

Xian Lin¹, Junjie Jiang¹, Zuanming Jin^1,2, Dongyang Wang³, Zhen Tian³,Jiaguang Han³, Zhenxiang Cheng^1,4 and Guohong Ma^1,a)


a) Author to whom correspondence should be addressed. Electronic mail: ghma@staff.shu.edu.cn
Appl. Phys. Lett. 106, 092403 (2015); http://dx.doi.org/10.1063/1.4913998
http://scitation.aip.org/content/aip/journal/apl/106/9/10.1063/1.4913998

Using the terahertz time-domain spectroscopy, we demonstrate the spin reorientation of a canted antiferromagnetic YFeO3 single crystal, by evaluating the temperature and magnetic field dependence of resonant frequency and amplitude for the quasi-ferromagnetic (FM) and quasi-antiferromagnetic modes (AFM), a deeper insight into the dynamics of spin reorientation in rare-earth orthoferrites is established. Due to the absence of 4f-electrons in Y ion, the spin reorientation of Fe sublattices can only be induced by the applied magnetic field, rather than temperature. In agreement with the theoretical predication, the frequency of FM mode decreases with magnetic field. In addition, an obvious step of spin reorientation phase transition occurs with a relatively large applied magnetic field of 4 T. By comparison with the family members of RFeO3 (R = Y³⁺ or rare-earth ions), our results suggest that the chosen of R would tailor the dynamical rotation properties of Fe ions, leading to the designable spin switching in the orthoferrite antiferromagnetic systems.

Abstract-Complementary terahertz absorption and inelastic neutron study of the dynamic anisotropy contribution to zone-center spin waves in a canted antiferromagnet NdFeO3

Evan Constable, D. L. Cortie, Joseph Horvat, R. A. Lewis, Zhenxiang Cheng, Guochu Deng, Shixun Cao, Shujuan Yuan, and Guohong Ma
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.90.054413

We employ a combination of pulsed- and continuous-wave polarized terahertz spectroscopy techniques to probe temperature-dependent spin waves in the antiferromagnet NdFeO3. Our optical data span 1.6–467 K and reveal a conspicuous spin reorientation between 110 and 170 K, during which the lower-energy mode softens completely. Complementary inelastic neutron scattering reveals that the frequencies of the optically excited spin waves are consistent with a temperature-variable spin gap in the low-energy spin-wave dispersion of NdFeO3. The result links the temperature dependence of the spin waves to a dynamic in-plane anisotropy. The magnetic anisotropy is calculated based on the results of the optical measurements. The change observed in the anisotropy energy along the a and c crystal axes suggests that the spin reorientation evident in NdFeO3 is driven by temperature-dependent in-plane anisotropy.

DOI: http://dx.doi.org/10.1103/PhysRevB.90.054413

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