Abstract-Double frequency plasmonic amplification of terahertz radiation in a periodical double-layer graphene

O V Polischuk, I M Moiseenko, M Y Morozov, V V Popov,

https://iopscience.iop.org/article/10.1088/1742-6596/1092/1/012119/meta

The plasmon amplification spectrum of terahertz radiation in a double-layer graphene nanoribbon array is theoretically studied. It is shown that this graphene structure exhibits strong plasmon response and giant amplification at vicinity of the anticrossing regime between optical and acoustic plasmon modes at room temperature.

Abstract-Giant amplification of terahertz plasmons in a double-layer graphene

M Yu Morozov, I M Moiseenko,  V V Popov

https://iopscience.iop.org/article/10.1088/1361-648X/aaa648/meta

The amplification of terahertz plasmons in a pair of parallel active graphene monolayers is studied theoretically. The plasmon wave in a symmetric double-layer graphene structure splits into two branches with a symmetric and an antisymmetric distribution of tangential to graphene component of the electric field across the plane of symmetry of the structure. It is shown that, normalized to the wavelength, the terahertz plasmon amplification factor of the symmetric mode in the double-layer graphene structure could be greater than that in a single graphene layer by four orders of magnitude.

Abstract-Terahertz detector with series connection of asymmetric gated transistors

D M Yermolaev1, K M Marem'yanin2, N A Maleev4, V E Zemlyakov1, V I Gavrilenko2, V V Popov3 and S Yu Shapoval1

yermolayev.denis@gmail.com

1 Institute of Microelectronic Technology and High-Purity Materials, Russia
2 Institute for Physics of Microstructures, Russia
3 Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russia
4 Ioffe Physical Technical Institute, Russia 

http://iopscience.iop.org/1742-6596/486/1/012016;jsessionid=590E7E5B537BB812B7FF197D7794D0D8.c2

Terahertz (THz) detection by a one-dimensional array of series connected field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced voltaic responsivity up to 2 kV/W. Asymmetrical position of the gate contact in each FET in the array enables strong photovoltaic response.