Abstract-THz-to-optical conversion in wireless communications using an ultra-broadband plasmonic modulator

S. Ummethala, T. Harter, K. Koehnle, Z. Li, S. Muehlbrandt, Y. Kutuvantavida, J. Kemal, P. Marin-Palomo, J. Schaefer, A. Tessmann, S. K. Garlapati, A. Bacher, L. Hahn, M. Walther, T. Zwick, S. Randel, W. Freude. C. Koos,

Fig. 1: Seamless integration of THz wireless links into fibre-optic infrastructures by direct O/T and T/O conversion.

https://www.nature.com/articles/s41566-019-0475-6

Future wireless communication networks will need to handle data rates of tens or even hundreds of Gbit s−1 per link, requiring carrier frequencies in the unallocated THz spectrum. In this context, seamless integration of THz links into existing fibre-optic infrastructures3 is of great importance to complement the inherent portability and flexibility advantages of wireless networks and the reliable and virtually unlimited capacity of optical transmission systems. On the technological level, this requires novel device and signal processing concepts for direct conversion of data streams between the THz and optical domains. Here, we demonstrate a THz link that is seamlessly integrated into a fibre-optic network using direct THz-to-optical (T/O) conversion at the wireless receiver. We exploit an ultra-broadband silicon-plasmonic modulator having a 3 dB bandwidth in excess of 0.36 THz for T/O conversion of a 50 Gbit s−1 data stream that is transmitted on a 0.2885 THz carrier over a 16-m-long wireless link. Optical-to-THz (O/T) conversion at the wireless transmitter relies on photomixing in a uni-travelling-carrier photodiode.

Abstract-Silicon–plasmonic integrated circuits for terahertz signal generation and coherent detection

T. Harter, S. Muehlbrandt, S. Ummethala, A. Schmid, S. Nellen, L. Hahn, W. Freude,  C. Koos,

https://www.nature.com/articles/s41566-018-0237-x

Optoelectronic signal processing offers great potential for generation and detection of ultra-broadband waveforms in the terahertz range (so-called T-waves). However, fabrication of the underlying devices still relies on complex processes using dedicated III–V semiconductor substrates. This severely restricts the application potential of current T-wave transmitters and receivers and impedes co-integration of these devices with advanced photonic signal processing circuits. Here, we demonstrate that these limitations can be overcome by plasmonic internal-photoemission detectors (PIPEDs). PIPEDs can be realized on the silicon photonic platform, which allows exploiting the enormous opportunities of the associated device portfolio. In our experiments, we demonstrate both T-wave signal generation and coherent detection at frequencies up to 1 THz. To prove the viability of our concept, we monolithically integrate PIPED transmitters and receivers on a common silicon chip and use them to measure the complex transfer impedance of an integrated T-wave device.