Showing posts with label Robert H. Hauge. Show all posts
Showing posts with label Robert H. Hauge. Show all posts

Friday, April 17, 2015

Abstract-Generation of terahertz radiation by optical excitation of aligned carbon nanotubes


Nano Lett., Just Accepted Manuscript
DOI: 10.1021/acs.nanolett.5b00494
Publication Date (Web): April 16, 2015
Copyright © 2015 American Chemical Society

We have generated coherent pulses of terahertz radiation from macroscopic arrays of aligned single-wall carbon nanotubes (SWCNTs) excited by femtosecond optical pulses without externally applied bias. The generated terahertz radiation is polarized along the SWCNT alignment direction. We propose that top-bottom asymmetry in the SWCNT arrays produces a built-in electric field in semiconducting SWCNTs, which enables generation of polarized terahertz radiation by a transient photocurrent surge directed along the nanotube axis.

Thursday, May 29, 2014

Abstract-Carbon Nanotube Terahertz Detector


Xiaowei He Naoki Fujimura Jennifer Meagan 
Nano Lett., Just Accepted Manuscript
DOI: 10.1021/nl5012678
Publication Date (Web): May 29, 2014
Copyright © 2014 American Chemical Society

Terahertz (THz) technologies are promising for diverse areas such as medicine, bioengineering, astronomy, environmental monitoring, and communications. However, despite decades of world-wide efforts, the THz region of the electromagnetic spectrum still continues to be elusive for solid state technology. Here, we report on the development of a powerless, compact, broadband, flexible, large-area, and polarization-sensitive CNT THz detector that works at room temperature. The detector is sensitive throughout the entire range of the THz technology gap, with responsivities as high as 2.5 V/W and polarization ratios as high as 5:1. Complete thermoelectric and opto-thermal characterization together unambiguously reveal the photothermoelectric origin of the THz photosignal, triggered by plasmonic absorption and collective antenna effects, and suggest that judicious design of thermal management and quantum engineering of Seebeck coefficients will lead to further enhancement of device performance.