Abstract-Tunable cavity-enhanced terahertz frequency-domain optical Hall effect

Review of Scientific Instruments

Sean Knight, Stefan Schöche,  Philipp Kühne, Tino Hofmann,  Vanya Darakchieva, Mathias Schubert, 

Three-dimensional surface rendering of model-calculated cavity-enhanced field-reversal THz-OHE data for an AlInN/AlN/GaN HEMT structure grown on a sapphire substrate as functions of frequency ν, external cavity distance dgap, and angle of incidence Φa. Data for ΔM13,31 = M13,31(+B) − M13,31(−B) are shown as an example. Values within the range of −0.02 to 0.02 are omitted for clarity. The green horizontal plane at Φa = 45° indicates the instrumental settings for the angle of incidence in this work. Model parameters are given in the text. Note that the model-calculated plot for ΔM23,32 is similar in appearance to that of ΔM13,31 and is excluded here for brevity.

https://aip.scitation.org/doi/abs/10.1063/5.0010267

Presented here is the development and demonstration of a tunable cavity-enhanced terahertz (THz) frequency-domain optical Hall effect (OHE) technique. The cavity consists of at least one fixed and one tunable Fabry–Pérot resonator. The approach is suitable for the enhancement of the optical signatures produced by the OHE in semi-transparent conductive layer structures with plane parallel interfaces. Tuning one of the cavity parameters, such as the external cavity thickness, permits shifting of the frequencies of the constructive interference and provides substantial enhancement of the optical signatures produced by the OHE. A cavity-tuning optical stage and gas flow cell are used as examples of instruments that exploit tuning an external cavity to enhance polarization changes in a reflected THz beam. Permanent magnets are used to provide the necessary external magnetic field. Conveniently, the highly reflective surface of a permanent magnet can be used to create the tunable external cavity. The signal enhancement allows the extraction of the free charge carrier properties of thin films and can eliminate the need for expensive superconducting magnets. Furthermore, the thickness of the external cavity establishes an additional independent measurement condition, similar to, for example, the magnetic field strength, THz frequency, and angle of incidence. A high electron mobility transistor (HEMT) structure and epitaxial graphene are studied as examples. The tunable cavity-enhancement effect provides a maximum increase of more than one order of magnitude in the change of certain polarization components for both the HEMT structure and epitaxial graphene at particular frequencies and external cavity sizes.

Abstract-Advanced Terahertz Frequency-Domain Ellipsometry Instrumentation forIn SituandEx SituApplications

Philipp Kühne,  Nerijus Armakavicius, Vallery Stanishev,  Craig M. Herzinger,  Mathias Schubert,  Vanya Darakchieva

https://ieeexplore.ieee.org/document/8331870/


We present a terahertz (THz) frequency-domain spectroscopic ellipsometer design that suppresses formation of standing waves by use of stealth technology approaches. The strategy to suppress standing waves consists of three elements geometry, coating, and modulation. The instrument is based on the rotating analyzer ellipsometer principle and can incorporate various sample compartments, such as a superconducting magnet, in situ gas cells, or resonant sample cavities, for example. A backward wave oscillator and three detectors are employed, which permit operation in the spectral range of 0.1-1 THz (3.3-33 cm -1 or 0.4-4 meV). The THz frequency-domain ellipsometer allows for standard and generalized ellipsometry at variable angles of incidence in both reflection and transmission configurations. The methods used to suppress standing waves and strategies for an accurate frequency calibration are presented. Experimental results from dielectric constant determination in anisotropic materials, and free charge carrier determination in optical Hall effect (OHE), resonant-cavity enhanced OHE, and in situ OHE experiments are discussed. Examples include silicon and sapphire optical constants, free charge carrier properties of two-dimensional electron gas in a group III nitride high electron mobility transistor structure, and ambient effects on free electron mobility and density in epitaxial graphene.