Abstract-Colossal Terahertz Field Enhancement using Split-Ring Resonators with a Sub-10 nm Gap

Nayeon Kim, Sungjun In, Dukhyung Lee, Jiyeah Rhie, Jeeyoon Jeong, Dai-Sik Kim, Namkyoo Park


http://pubs.acs.org/doi/abs/10.1021/acsphotonics.7b00627?mi=aayia761&af=R&AllField=nano&target=default&targetTab=std

Terahertz (THz) nanogap structures have emerged as versatile platforms for THz science and applications by virtue of their strong in-gap field enhancements and accompanying high levels of sensitivity to gap environments. However, despite their potential, reliable fabrication methods by which to create THz structures with sub-10 nm gaps remain limited. In this work, we fabricated THz split-ring resonator (SRR) arrays featuring a sub-10 nm split gap. Our fabrication method, involving photolithography, argon ion milling, and atomic layer deposition, is a high-throughput technique which is also applicable to the fabrication of other THz structures with sub-10 nm gaps. Through THz-time domain spectroscopy and a numerical simulation, we identified the fundamental magnetic resonances of the nanogap SRRs, at which the electric field enhancement factor is experimentally estimated to be around 7000. This substantial field enhancement makes SRRs with a sub-10 nm gap suitable for the study of high-field phenomena and related applications.

Abstract-Ultimate terahertz field enhancement of single nanoslits

Young-Mi Bahk, Sanghoon Han, Jiyeah Rhie, Joohyun Park, Hyeongtag Jeon, Namkyoo Park, and Dai-Sik Kim

Phys. Rev. B 95, 075424

http://journals.aps.org/prb/abstract/10.1103/PhysRevB.95.075424

A single metallic slit is the simplest plasmonic structure for basic physical understanding of electromagnetic field confinement. By reducing the gap size, the field enhancement is expected to first go up and then go down when the gap width becomes subnanometer because of the quantum tunneling effects. A fundamental question is whether we reach the classical limit of field enhancement before entering the quantum regime, i.e., whether the quantum effects undercut the highest field enhancement classically possible. Here, by performing terahertz time domain spectroscopy on single slits of widths varying from 1.5 nm to 50 µm, we show that ultimate field enhancement determined by the wavelength of light and film thickness can be reached before we hit the quantum regime. Our paper paves way toward designing a quantum plasmonic system with maximum control yet without sacrificing the classical field enhancements.

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Semi- OT Abstract-Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

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  Woo Young Kim,
• Hyeon-Don Kim,
• Teun-Teun Kim,
• Hyun-Sung Park,
• Kanghee Lee,
• Hyun Joo Choi,
• Seung Hoon Lee,
• Jaehyeon Son,
• Namkyoo Park
• & Bumki Min
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  • http://www.nature.com/ncomms/2016/160127/ncomms10429/abs/ncomms10429.html

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Abstract-Terahertz field enhancement in asymmetric and tapered nano-gaps

Sanghoon Han, Young-Mi Bahk, Namkyoo Park, and Dai-Sik Kim
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-3-2065

We investigate field enhancement inside metal-insulator-metal gaps with asymmetric thicknesses and tapered shapes in the terahertz regime. Finite-difference time-domain simulations were conducted for calculation of field enhancement factor. The calculation indicates that for asymmetric sample, field enhancement increases proportionally with the decrease of the thinner of the two metal film thicknesses surrounding the gap. Concomitantly, angle variation has little effect on the field enhancement if the thickness of the narrowest gap region is fixed. A model based on the capacitor concept is proposed for intuitive understanding of the phenomena.

© 2016 Optical Society of America

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