Haisu Li, Mei Xian Low, Rajour Tanyi Ako, Madhu Bhaskaran, Sharath Sriram, Withawat Withayachumnankul, Boris T. Kuhlmey, Shaghik Atakaramians,
https://onlinelibrary.wiley.com/doi/abs/10.1002/admt.202000117
Broadband, low‐loss, low‐dispersion propagation of terahertz pulses in compact waveguide chips is indispensable for terahertz integration. Conventional 2D photonic crystals (PCs) based terahertz waveguides are either all‐metallic or all‐dielectric, having either high propagation losses due to the Ohmic loss of metal, or a narrow transmission bandwidth restricted by the range of single‐mode operation in a frequency range defined by the PC bandgap, respectively. To address this problem, a hybrid (metal/dielectric) terahertz waveguide chip is developed, where the guided mode is completely confined by parallel gold plates and silicon PCs in vertical and lateral directions, respectively. A unique multiwafer silicon‐based fabrication process, including gold–silicon eutectic bonding, micropatterning, and Bosch silicon etching, is employed to achieve the self‐supporting hybrid structure. Theoretical and experimental investigations demonstrate that the hybrid waveguide supports a single‐mode transmission covering 0.367–0.411 THz (bandwidth of 44 GHz, over twice wider than that of all‐silicon PC waveguides) with low loss (below 0.05 dB mm−1) and low group velocity dispersion (from −8.4 to −0.8 ps THz−1 mm−1). This work enables more compact, wideband terahertz waveguides and auxiliary functional components that are integratable in chips toward ultra‐high‐density integrated terahertz devices in particular in the field of wireless communications.
