Abstract-Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions

V Ryzhii1,2,3, M Ryzhii4, M S Shur5, V Mitin1,6, A Satou1 and T Otsuji1

Published 11 July 2016 • © 2016 IOP Publishing Ltd 

http://iopscience.iop.org/article/10.1088/0022-3727/49/31/315103/meta

We evaluate the proposed resonant terahertz (THz) detectors on the basis of field-effect transistors (FETs) with split gates, electrically induced lateral p–n junctions, uniform graphene layer (GL) or perforated (in the p–n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET- and PGL-FET-detectors is associated with the rectification of the ac current across the lateral p–n junction enhanced by the excitation of bound plasmonic oscillations in the p- and n-sections of the channel. Using the developed device model, we find the GL-FET- and PGL-FET-detector characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in the PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p–n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity.

Abstract-Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions

V Ryzhii, M Ryzhii, M S Shur, V Mitin, A Satou, T Otsuji

(Submitted on 18 Apr 2016)

http://arxiv.org/abs/1604.04972

We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET- and PGL-FET detectors is associated with the rectification of the ac current across the lateral p-n junction enhanced by the excitation of bound plasmonic oscillations in in the p- and n-sections of the channel. Using the developed device model, we find the GL-FET and PGL-FET-detectors characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p-n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity

Abstract-Graphene vertical cascade interband terahertz and infrared photodetectors

V Ryzhii1,2, T Otsuji1, M Ryzhii3, V Ya Aleshkin4, A A Dubinov4, D Svintsov5, V Mitin6 and M S Shur7

http://iopscience.iop.org/2053-1583/2/2/025002

v-ryzhii@riec.tohoku.ac.jp

1 Research Institute for Electrical Communication, Tohoku University, Sendai 980–8577, Japan
2 Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University and Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 105005, Russia
3 Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965–8580, Japan
4 Institute for Physics of Microstructures of RAS and Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod 603950, Russia
5 Institute of Physics and Technology of RAS and Department of General Physics, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
6 Department of Electrical Engineering, University at Buffalo, SUNY, Buffalo, NY 1460–1920, USA
7 Department of Electrical, Electronics, and System Engineering and Department of Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA 

We propose and evaluate vertical cascade terahertz and infrared photodetectors based on multiple-graphene-layer (GL) structures with thin tunnel barrier layers (made of tungsten disulfide or related materials). The operation of photodetectors is associated with the cascaded radiative electron transitions from the valence band in the GLs to the conduction band in the neighboring GLs (interband and inter-GL transitions). We calculate the spectral dependencies of the responsivity and detectivity for vertical cascade interband GL photodetectors (I-GLPDs) with different numbers of GLs and doping levels at different bias voltages in a wide range of temperatures. We show the possibility of effectively manipulating the spectral characteristics with the applied voltage. The spectral characteristics also depend on the GL doping level, which opens up the prospect of using I-GLPDs in multicolor systems. The advantages of the I-GLPDs under consideration are associated with their sensitivity to normal incident radiation, the weak temperature dependence of the dark current, as well as their high speed operation. A comparison of the proposed I-GLDs with quantum-well intersubband photodectors demonstrates the superiority of the former, including having better detectivity at room temperature and a higher speed. The vertical cascade I-GLDs can also surpass the lateral p-i-n GLDs in terms of speed.

Abstract-Double graphene-layer plasma resonances terahertz detector

http://iopscience.iop.org/0022-3727/45/30/302001

We propose a detector of terahertz radiation based on a double graphene-layer heterostructure utilizing the tunnelling between graphene layers and the resonant excitation of plasma oscillations (standing plasma waves). Using the developed device model, we substantiate the detector operation and calculate the spectral characteristics. It is shown that the detector responsivity exhibits the resonant peaks when the frequency of incoming terahertz radiation approaches the resonant plasma frequencies. These frequencies are tuned by the bias voltage. The height of the responsivity resonant peaks in sufficiently perfect double graphene-layer heterostructures can markedly exceed those in the resonant plasma–wave detectors based on the standard heterostructures and utilizing the plasma hydrodynamic nonlinearity.