Abstract-Annealing temperature dependent terahertz-thermal-electrical conversion characteristics of three-dimensional microporous graphene

Meng Chen, Yingxin Wang, Jianguo Wen, Honghui Chen, Wenle Ma, Fei Fan, Yi Huang, and Ziran Zhao

https://pubs.acs.org/doi/10.1021/acsami.8b20095


Three-dimensional microporous graphene (3DMG), possesses ultrahigh photon absorptivity and excellent photothermal conversion ability, and shows great potential in energy storage and photodetection, especially for the not well-explored terahertz (THz) frequency range. Here, we report on the characterization of THz-thermal-electrical conversion properties of 3DMG with different annealing treatments. We observe distinct behavior of bolometric and photothermoelectric responses varying with annealing temperature. Resistance-temperature characteristics and thermoelectric power measurements reveal that marked charge carrier reversal occurs in 3DMG as the annealing temperature changes between 600 and 800 °C, which can be well explained by Fermi-level tuning associated with oxygen functional group evolution. Benefiting from the large specific surface area of 3DMG, it has an extraordinary capability of reaching thermal equilibrium quickly and exhibits a fast photothermal conversion with a time constant of 23 ms. In addition, 3DMG can serve as an ideal absorber to improve the sensitivity of THz detectors and we demonstrate that the responsivity of a carbon nanotube device could be enhanced by 12 times through 3DMG. Our work provides new insight into the physical characteristics of carrier transport and THz-thermal-electrical conversion in 3DMG controlled by annealing temperature and opens an avenue for the development of highly efficient graphene-based THz devices.

Abstract-Reduction degree regulated room-temperature terahertz direct detection based on fully suspended and low-temperature thermally reduced graphene oxides

Yang Cao, Yajing Zhao, Yingxin Wang, Yue Zhang, Jianguo Wen, Ziran Zhao, Lianqing Zhu,

https://www.sciencedirect.com/science/article/pii/S0008622318311540#!

A series of fully-suspended reduced graphene oxide (RGO) room-temperature THz detectors were fabricated based on low-temperature (from 100 to 350 °C) thermally-reduced free-standing graphene oxide (GO) thin films. The suspended configuration results in a four-fold increase in responsivity and at least one order of magnitude increase in response speed compared to the substrate-supported detector. More importantly, the responsivity can be adjusted over a wide range from 10−2–102 mA W−1 and simultaneously the response speed can be adjusted on the order of tens of milliseconds by only tuning the reduction temperature of GO namely the reduction degree of GO. The regulation mechanism was revealed at the molecular level, i. e., the content of C=O functional group and the O/C ratio inside RGO, which are vary with the reduction degree of GO, are closely related to THz absorbance and electrical conductivity of RGO thin films, respectively. The experimental results demonstrated that the as high as possible content of C=O functional group and simultaneously a moderate O/C ratio can achieve optimal synergy between the THz absorption and electrical conductivity of the RGO thin films, thereby achieving an optimal THz detection performance.