Showing posts with label InSb. Show all posts
Showing posts with label InSb. Show all posts

Wednesday, September 7, 2016

Abstract-Magneto-optical properties of InSb for terahertz applications





Magneto-optical permittivity tensor spectra of undoped InSb, n-doped and p-doped InSb crystals were determined using the terahertz time-domain spectroscopy (THz-TDS) and the Fourier transform far-infrared spectroscopy (far-FTIR). A Huge polar magneto-optical (MO) Kerr-effect (up to 20 degrees in rotation) and a simultaneous plasmonic behavior observed at low magnetic field (0.4 T) and room temperature are promising for terahertz nonreciprocal applications. We demonstrate the possibility of adjusting the the spectral rage with huge MO by increase in n-doping of InSb. Spectral response is modeled using generalized magneto-optical Drude-Lorentz theory, giving us precise values of free carrier mobility, density and effective mass consistent with electric Hall effect measurement.

Friday, July 15, 2016

Abstract-Effect of temperature on terahertz photonic and omnidirectional band gaps in one-dimensional quasi-periodic photonic crystals composed of semiconductor InSb


Bipin K. Singh and Praveen C. Pandey

https://www.osapublishing.org/ao/abstract.cfm?uri=ao-55-21-5684

Engineering of thermally tunable terahertz photonic and omnidirectional bandgaps has been demonstrated theoretically in one-dimensional quasi-periodic photonic crystals (PCs) containing semiconductor and dielectric materials. The considered quasi-periodic structures are taken in the form of Fibonacci, Thue–Morse, and double periodic sequences. We have shown that the photonic and omnidirectional bandgaps in the quasi-periodic structures with semiconductor constituents are strongly depend on the temperature, thickness of the constituted semiconductor and dielectric material layers, and generations of the quasi-periodic sequences. It has been found that the number of photonic bandgaps increases with layer thickness and generation of the quasi-periodic sequences. Omnidirectional bandgaps in the structures have also been obtained. Results show that the bandwidths of photonic and omnidirectional bandgaps are tunable by changing the temperature and lattice parameters of the structures. The generation of quasi-periodic sequences can also change the properties of photonic and omnidirectional bandgaps remarkably. The frequency range of the photonic and omnidirectional bandgaps can be tuned by the change of temperature and layer thickness of the considered quasi-periodic structures. This work will be useful to design tunable terahertz PC devices.
© 2016 Optical Society of America
Full Article  |  PDF Article

Sunday, May 29, 2016

Abstract-Terahertz generation from electron- and neutron-irradiated semiconductor crystal surfaces


  • S.A. Bereznaya, 
  • Z.V. Korotchenko! R.
  • A. Redkin, S.
  • Yu. Sarkisov, V.
  • N. Brudnyi! A.
  • V. Kosobutsky, V.
  • V. Atuchin

Terahertz generation from the InP, InSb, GaAs and GaSe crystal surfaces excitated by femtosecond laser pulses has been studied. The terahertz spectra emitted from the native crystals and the crystals previously irradiated by high-energy neutrons or electrons have been recorded. Also, a simulation of the terahertz emission process has been performed. A weak terahertz signal generated from the GaSe native surface has been registered. In the case of electron-irradiated GaSe, the signal is increased several fold because of increased laser radiation absorption.