Abstract-Terahertz luminescence and photoconductivity associated with the impurity electron transitions in GaAs/AlGaAs quantum wells

A D Kurnosova, I S Makhov,  D A Firsov, 

https://iopscience.iop.org/article/10.1088/1742-6596/1482/1/012019

The photoconductivity and photoluminescence spectra of GaAs/AlGaAs quantum wells doped with shallow donors are studied at low lattice temperatures. The optical electron transitions between the first electron subband and donor ground states, as well as between the excited and ground donor states, are revealed in the terahertz photoluminescence and photoconductivity spectra. The temperature evolution of the impurity-related photocurrent in the terahertz spectral range is also studied.

Abstract-Impurity-assisted terahertz photoluminescence in quantum wells under conditions of interband stimulated emission

I S Makhov, V Yu Panevin, D A Firsov, L E Vorobjev, A N Sofronov, M Ya Vinnichenko, N A Maleev, A P Vasil'ev,

http://iopscience.iop.org/article/10.1088/1742-6596/993/1/012017/meta

Terahertz and near-infrared photoluminescence under conditions of interband stimulated emission are studied in n-GaAs/AlGaAs quantum well laser structure. The observed terahertz emission is related to the optical transitions of nonequilibrium electrons from the first electron subband and excited donor states to donor ground states in quantum wells. The opportunity to increase the intensity of impurity-assisted terahertz emission due to interband stimulated emission with the participation of impurity centres is demonstrated.