Abstract-Advanced non-quasi-static(NQS) compact model for characterization of non-resonant plasmonic terahertz detector

Sang Hyo Ahn, Min Woo Ryu,  Esan Jang, Hyeong Ju Jeon, Kyung Rok Kim

http://ieeexplore.ieee.org/document/8085323/

We propose advanced non-quasi-static (NQS) compact model of field-effect transistor (FET) for the characterization of a non-resonant plasma-mode terahertz (THz) detector in THz frequency regime by verifying the gate resistance effects on the transient delay and non-resonant plasmonic mechanism with characteristic length, which is a propagation distance of 2-dimensional electron gas (l2DEG), in the channel. Under the super-imposed small-signal ac voltage with 0.2 THz frequency in HSPICE simulation, the plasmonic THz power detection simulation capability of the proposed NQS model has been verified by demonstrating the well-matched results of dc output voltage (Δu) with calibrated TCAD and experimentally measured data. These results can provide the reliable circuit simulation platform for real-time multi-pixel THz imaging operation

Abstract-Highly-sensitive plasmonic nano-ring transistor for monolithic terahertz active antenna

 Min Woo Ryu,  Ramesh Patel,  Esan Jang, Sang Hyo Ahn, Hyeong Ju Jeon, Mun Seok Choe, Eunmi Choi,  Ki Jin Han,  Kyung Rok Kim

http://ieeexplore.ieee.org/document/8117385/

We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular active antenna, which is designed for a 0.12-THz resonance frequency, we experimentally demonstrated the highly-enhanced responsivity (RV) > 1 kV/W (× 5) and reduced noise-equivalent power (NEP) <; 10 pW/Hz0.5 (× 1/10).