Abstract-Probing the photophysics of semiconductor nanomaterials using optical pump-terahertz probe spectroscopy: from nanowires to perovskites

Hannah J. Joyce, Lissa Eyre, Stephanie O. Adeyemo, Sarwat A. Baig, Jessica L. Boland, Christopher L. Davies, Michael B. Johnston, Felix Deschler, H. Hoe Tan, C. Jagadish,

https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10724/107240F/Probing-the-photophysics-of-semiconductor-nanomaterials-using-optical-pump-terahertz/10.1117/12.2320720.short?SSO=1

Optical pump-terahertz probe spectroscopy is a powerful contact-free technique for probing the electronic properties of novel nanomaterials and their response to photoexcitation. This technique can measure charge carrier transport and dynamics with sub-picosecond temporal resolution. Electrical conductivity, charge carrier lifetimes, mobilities, dopant concentrations and surface recombination velocities can be measured with high accuracy and with considerably higher throughput than achievable with traditional contact-based techniques. We describe how terahertz spectroscopy is revealing the fascinating properties and guiding the development of a number of promising semiconductor materials, with particular emphasis on III-V semiconductor nanowires and devices.

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Abstract-Engineering semiconductor nanowires for photodetection: from visible to terahertz

Hannah J. Joyce,  Jack Alexander-Webber, Kun Peng,  Michael B. Johnston, Patrick Parkinson,  H. Hoe Tan, C. Jagadish

https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10729/1072909/Engineering-semiconductor-nanowires-for-photodetection-from-visible-to-terahertz/10.1117/12.2320715.short

III–V semiconductor nanowires combine the properties of III–V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III–V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.