Showing posts with label Chenyuyi Shi. Show all posts
Showing posts with label Chenyuyi Shi. Show all posts

Thursday, February 7, 2019

Abstract-Tunable terahertz hybrid graphene-metal patterns metamaterials


Chenyuyi Shi, Xiaoyong He, Jun Peng, Guina Xiao, Feng Liu, Fangting Lin, Hao Zhang,

Fig. 3. (a)-(c) show the surface current density of the graphene-graphene SDB structure…

https://www.sciencedirect.com/science/article/pii/S0030399218317250

Based on the hybrid metal-graphene structures, we investigated the tunable Fano resonances in the terahertz region, including the effects of graphene Fermi levels, structural parameters, and operation frequencies. The results reveal that an obvious Fano resonance can be observed, the maximum peak value of Fano resonance can reach 0.9711, and its Q-quality factor is more about 20. With the help of the graphene layer, the resonant curves of the proposed structures can be effectively modulated, the frequency modulation depth can reach 60% as the Fermi level changes in the range of 0.1–1.0 eV. In addition, by varying the length of graphene bar in the scope of 10–60 μm, the amplitude modulation depths are about 21.0%. The results are helpful for designing novel graphene-based tunable terahertz devices with high Q factor, e.g. modulators, sensors and antenna.

Friday, February 16, 2018

Abstract-Investigation of graphene-supported tunable asymmetric terahertz metamaterials



Chenyuyi Shi, Xiaoyong He, Feng Liu, Fangting Lin, and Hao Zhang

https://www.osapublishing.org/josab/abstract.cfm?uri=josab-35-3-575

By integrating a graphene layer with asymmetric split-ring metamaterial (MM) metal resonators, we investigated tunable propagation properties in the terahertz regime, including the effects of graphene Fermi levels, structural parameters, and operation frequencies. The results reveal that a sharp inductor-capacitor (LC) resonance can be observed at low frequency for the asymmetric MM structure, and its Q factor can reach more than 17.5. With the help of a graphene layer, the optical response is modulated efficiently. For instance, if the Fermi level changes in the range of 0.01–0.3 eV, for the semiconductor MM structure, the modulation depths (MDs) of amplitude and frequency are 27.0% and 43.4%, respectively. In addition, the resonant curves of indium antimonide (InSb) MMs can be modulated by changing the temperature; the amplitude MD is 56.2% as the temperature changes in the range of 350–800 K. The Q factor of the InSb MM structure is about 44.6. The results are helpful for designing novel graphene-based tunable terahertz devices, e.g., filters and modulators.
© 2018 Optical Society of America