Abstract-Terahertz planar lenses based on plasmonic metasurfaces

Chang Yang, Yun Shen, Yanqiang Xie, Qi Zhou, Xiaohua Deng, Juncheng Cao,


https://www.sciencedirect.com/science/article/abs/pii/S037596011831185X


Plasmonic planar lenses on silicon substrate are designed to realize terahertz (THz) wave focusing. Super-unit-cells containing eight different resonant units are presented to construct eight concentric rings on the silicon substrate. By controlling of the position distribution of the resonant units, it is shown that focusing at 4.3 THz can be achieved. Moreover, due to that the eight units can steer THz wave and keep phase gradient in frequency range of 4.2 to 4.5 THz, the metalenses can realize broadband THz focusing. The results imply the potential applications in THz wave control devices of light collection and multi-channel optical communication.

Abstract-On-chip sub-terahertz surface plasmon polariton transmission lines in CMOS

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• Yuan Liang
• , Hao Yu
• , Hao Chi Zhang
• , Chang Yang
•  & Tie Jun Cui

http://www.nature.com/articles/srep14853

A low-loss and low-crosstalk surface-wave transmission line (T-line) is demonstrated at sub-THz in CMOS. By introducing periodical sub-wavelength structures onto the metal transmission line, surface plasmon polaritons (SPP) are excited and propagate signals via a strongly localized surface wave. Two coupled SPP T-lines and two quasi-TEM T-lines are both fabricated on-chip, each with a separation distance of 2.4 μm using standard 65 nm CMOS technology. Measurement results show that the SPP T-lines achieve wideband reflection coefficient lower than −14 dB and crosstalk ratio better than −24 dB, which is 19 dB lower on average than the traditional T-lines from 220 GHz to 325 GHz. The demonstrated compact and wideband SPP T-lines have shown great potential for future realization of highly dense on-chip sub-THz communications in CMOS.