Showing posts with label Andrey M. Baryshev. Show all posts
Showing posts with label Andrey M. Baryshev. Show all posts

Monday, July 10, 2017

Abstract-Surface wave control for large arrays of microwave kinetic inductance detectors



Large ultra-sensitive detector arrays are needed for present and future observatories for far infra-red, submillimeter wave (THz), and millimeter wave astronomy. With increasing array size, it is increasingly important to control stray radiation inside the detector chips themselves, the surface wave. We demonstrate this effect with focal plane arrays of 880 lens-antenna coupled Microwave Kinetic Inductance Detectors (MKIDs). Presented here are near field measurements of the MKID optical response versus the position on the array of a reimaged optical source. We demonstrate that the optical response of a detector in these arrays saturates off-pixel at the ∼−30 dB level compared to the peak pixel response. The result is that the power detected from a point source at the pixel position is almost identical to the stray response integrated over the chip area. With such a contribution, it would be impossible to measure extended sources, while the point source sensitivity is degraded due to an increase of the stray loading. However, we show that by incorporating an on-chip stray light absorber, the surface wave contribution is reduced by a factor >10. With the on-chip stray light absorber the point source response is close to simulations down to the ∼−35 dB level, the simulation based on an ideal Gaussian illumination of the optics. In addition, as a crosscheck we show that the extended source response of a single pixel in the array with the absorbing grid is in agreement with the integral of the point source measurements.

Thursday, January 26, 2017

Abstract-Modular 2SB SIS Receiver for 600–720 GHz: Performance and Characterization Methods


Andrey Khudchenko,   Ronald Hesper,   Andrey M. Baryshev,  Jan Barkhof,  Fausto Patricio Mena

http://ieeexplore.ieee.org/document/7801150/

A modular sideband-separating (2SB) receiver for 600–720 GHz has been built and tested. The used modular design allows to characterize all the parts separately, including testing of the superconductor–insulator–superconductor (SIS) junctions individually in a double-sideband mode before building them in to the 2SB assembly. The developed 2SB mixer has a single sideband noise temperature below 380 K in the entire operating band and reaches a level of 200 K in the best point. At the same time, the image rejection ratio (IRR) was demonstrated to be better than 11.5 dB over the entire band. However, we have found a discrepancy between the observed and expected performance. To investigate this problem, we have developed and applied methods to characterize RF and intermediate frequency imbalances of a fully assembled 2SB mixer using the SIS junction properties. As result, the IRR of our mixer was found to be limited by the RF imbalance, which is caused by complex standing waves created by reflections from the SIS junctions, the RF hybrid and the RF absorption load.

Thursday, January 19, 2017

Abstract-Modular 2SB SIS Receiver for 600–720 GHz: Performance and Characterization Methods


Andrey Khudchenko, Ronald Hesper, Andrey M. Baryshev

http://ieeexplore.ieee.org/document/7801150/authors

A modular sideband-separating (2SB) receiver for 600–720 GHz has been built and tested. The used modular design allows to characterize all the parts separately, including testing of the superconductor–insulator–superconductor (SIS) junctions individually in a double-sideband mode before building them in to the 2SB assembly. The developed 2SB mixer has a single sideband noise temperature below 380 K in the entire operating band and reaches a level of 200 K in the best point. At the same time, the image rejection ratio (IRR) was demonstrated to be better than 11.5 dB over the entire band. However, we have found a discrepancy between the observed and expected performance. To investigate this problem, we have developed and applied methods to characterize RF and intermediate frequency imbalances of a fully assembled 2SB mixer using the SIS junction properties. As result, the IRR of our mixer was found to be limited by the RF imbalance, which is caused by complex standing waves created by reflections from the SIS junctions, the RF hybrid and the RF absorption load.