Showing posts with label Alexander Paarmann. Show all posts
Showing posts with label Alexander Paarmann. Show all posts

Saturday, November 17, 2018

Abstract-Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures


We report the first observation of epsilon near zero (ENZ) phonon polaritons in an ultrathin AlN film fully hybridized with surface phonon polaritons (SPhP) supported by the adjacent SiC substrate. Employing a strong coupling model for the analysis of the dispersion and electric field distribution in these hybridized modes, we show that they share the most prominent features of the two precursor modes. The novel ENZ-SPhP coupled polaritons with a highly propagative character and deeply sub-wavelength light confinement can be utilized as building blocks for future infrared and terahertz (THz) nanophotonic integration and communication devices.

Wednesday, June 20, 2018

Abstract-Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures


Nikolai Christian Passler, Christopher R. Gubbin, Thomas Folland, I. Razdolski, D. Scott Katzer, D. F. Storm, Martin Wolf, Simone De Liberato, Joshua D Caldwell, Alexander Paarmann,

https://cdn-pubs.acs.org/doi/10.1021/acs.nanolett.8b01273

We report the first observation of epsilon near zero (ENZ) phonon polaritons in an ultrathin AlN film fully hybridized with surface phonon polaritons (SPhP) supported by the adjacent SiC substrate. Employing a strong coupling model for the analysis of the dispersion and electric field distribution in these hybridized modes, we show that they share the most prominent features of the two precursor modes. The novel ENZ-SPhP coupled polaritons with a highly propagative character and deeply sub-wavelength light confinement can be utilized as building blocks for future infrared and terahertz (THz) nanophotonic integration and communication devices.

Wednesday, September 27, 2017

Abstract-Terahertz Sum-Frequency Excitation of a Raman-Active Phonon


Sebastian Maehrlein, Alexander Paarmann, Martin Wolf, and Tobias Kampfrath




In stimulated Raman scattering, two incident optical waves induce a force oscillating at the difference of the two light frequencies. This process has enabled important applications such as the excitation and coherent control of phonons and magnons by femtosecond laser pulses. Here, we experimentally and theoretically demonstrate the so far neglected up-conversion counterpart of this process: THz sum-frequency excitation of a Raman-active phonon mode, which is tantamount to two-photon absorption by an optical transition between two adjacent vibrational levels. Coherent control of an optical lattice vibration of diamond is achieved by an intense terahertz pulse whose spectrum is centered at half the phonon frequency of 40 THz. Remarkably, the carrier-envelope phase of the THz pulse is directly transferred into the phase of the lattice vibration. New prospects in general infrared spectroscopy, action spectroscopy, and lattice trajectory control in the electronic ground state emerge.
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Friday, March 10, 2017

Abstract-Terahertz sum-frequency excitation of a Raman-active phonon





In stimulated Raman scattering, two incident optical waves induce a force oscillating at the difference of the two light frequencies. This process has enabled important applications such as the excitation and coherent control of phonons and magnons by femtosecond laser pulses. Here, we experimentally and theoretically demonstrate the so far neglected up-conversion counterpart of this process: THz sum-frequency excitation of a Raman-active phonon mode, which is tantamount to two-photon absorption by an optical transition between two adjacent vibrational levels. Coherent control of an optical lattice vibration of diamond is achieved by an intense terahertz pulse whose spectrum is centered at half the phonon frequency of 40 THz. Remarkably, the carrier-envelope phase of the driving pulse is directly imprinted on the lattice vibration. New prospects in infrared spectroscopy, light storage schemes and lattice trajectory control in the electronic ground state emerge.