R. Paiella, H. Durmaz, F. F. Sudradjat; D. Nothern, G. C. Brummer, W. Zhang; J. Woodward, T. D. Moustakas
https://www.spiedigitallibrary.org/proceedings/Download?fullDOI=10.1117/12.2274040
We report the development of terahertz intersubband photodetectors based on GaN/AlGaN quantum wells, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption. Two different approaches have been employed to mitigate the deleterious effects of the intrinsic polarization fields of nitride heterostructures: the use of suitably designed double-step quantum wells, and epitaxial growth on semipolar GaN substrates. Promising results are obtained with both approaches, which could be extended to other device applications as a way to utilize the intrinsic advantages of nitride semiconductors for THz intersubband optoelectronics.
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