Kevin M. K. H. Leong, Xiaobing Mei, Wayne H. Yoshida, Alexis Zamora, Jose G. Padilla, Ben S. Gorospe, Khanh Nguyen, William R. Deal,
http://ieeexplore.ieee.org/document/7953574/
This paper reports on development of 850 GHz band receiver and transmitter front-ends using a new generation of 25 nm indium phosphide high electron mobility transistor engineered for high maximum frequency of oscillation
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