USPTO Applicaton #: #20160351490 -Sub-terahertz/terahertz interconnect / Qualcomm Incorporated

USPTO Applicaton #: #20160351490 
Inventors: Mukul Gupta, Xiangdong Chen, Ohsang Kwon

http://www.freshpatents.com/-dt20161201ptan20160351490.php

 A MOS device includes first, second, third, and fourth interconnects. The first interconnect extends on a first track in a first direction. The first interconnect is configured in a metal layer. The second interconnect extends on the first track in the first direction. The second interconnect is configured in the metal layer. The third interconnect extends on a second track in the first direction. The third interconnect is configured in the metal layer. The second track is parallel to the first track. The third interconnect is coupled to the second interconnect. The second and third interconnects are configured to provide a first signal. The fourth interconnect extends on the second track in the first direction. The fourth interconnect is configured in the metal layer. The fourth interconnect is coupled to the first interconnect. The first and fourth interconnects are configured to provide a second signal different than the first signal.