Abstract-Terahertz photodetectors arrays based on large scale MoSe2 monolayer

Huiqiang Liu,   Zuxin Chen,   Xuechen Chen,   Sheng Chu,  Jingwen Huang and   Ru-Fang Peng  

J. Mater. Chem. C, 2016, Accepted Manuscript

DOI: 10.1039/C6TC02748B

http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C6TC02748B#!divAbstract

Large domains of monolayered transition-metal dichalcogenides (TMDCs) have emerged as exciting material systems because of their potential to provide a platform for ultrathin circuits and optoelectronics systems. Here we report ambient pressure chemical vapor deposition (CVD) growth of large scale MoSe₂ film for terahertz (THz) applications. Arrays of 100×60 µm MoSe₂rectangle layers were etched out and field effect transistors (FETs) were fabricated on these arrays. The device exhibits current on/off ratio of ∼10⁴. The THz photoresponse of the devices was studied and demonstrated the THz responsivity of ~38 mV/W, suggesting that TMDCs can be promising materials for long wavelength optoelectronics applications.