A repository & source of cutting edge news about emerging terahertz technology, it's commercialization & innovations in THz devices, quality & process control, medical diagnostics, security, astronomy, communications, applications in graphene, metamaterials, CMOS, compressive sensing, 3d printing, and the Internet of Nanothings. NOTHING POSTED IS INVESTMENT ADVICE! REPOSTED COPYRIGHT IS FOR EDUCATIONAL USE.
Tuesday, May 17, 2016
Abstract-Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures
Terahertz intersubband photodetectors are developed based on GaN/AlGaN quantum wellsgrown on a free-standing semi-polar GaN substrate. These quantum wells are nearly free of the polarization-induced internal electric fields that severely complicate the design of nitride intersubband devices on traditional c-plane substrates. As a result, a promising bound-to-quasi-bound THz photodetector design can be implemented. Pronounced photocurrent peaks at the design frequency near 10 THz are measured, covering frequencies that are fundamentally inaccessible to existing arsenide intersubband devices due to reststrahlen absorption. This materials system provides a favorable platform to utilize the intrinsic advantages of nitride semiconductors for THz optoelectronics.
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