Abstract-Enhanced Crystal Quality of AlxIn1-xAsySb1-y for Terahertz Quantum Cascade Lasers

Tobias Zederbauer 1,* , Aaron Maxwell Andrews 1

, Donald MacFarland 1

, Hermann Detz 2

,Werner Schrenk 3

 and Gottfried Strasser 1,3

1 TU Wien, Institude of Solid State Electronics, Floragasse 7, 1040 Wien, Austria2 Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Wien, Austria3 TU Wien, Center for Micro and Nano Structures, Floragasse 7, 1040 Wien, Austria

* Author to whom correspondence should be addressed.

Received: 31 March 2016 / Revised: 14 April 2016 / Accepted: 15 April 2016 / Published: 20 April 2016

(This article belongs to the Special Issue Quantum Cascade Lasers - Advances and New Applications)

http://www.mdpi.com/2304-6732/3/2/20

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This work provides a detailed study on the growth of AlxIn1-xAsySb1-y lattice-matched to InAs by Molecular Beam Epitaxy. In order to find the conditions which lead to high crystal quality deep within the miscibility gap, AlxIn1-xAsySb1-y with x = 0.462 was grown at different growth temperatures as well as As2 and Sb2 beam equivalent pressures. The crystal quality of the grown layers was examined by high-resolution X-ray diffraction and atomic force microscopy. It was found that the incorporation of Sb into Al0.462In0.538AsySb1-y is strongly temperature-dependent and reduced growth temperatures are necessary in order to achieve significant Sb mole fractions in the grown layers. At 480 ∘C$$ lattice matching to InAs could not be achieved. At 410 ∘C$$ lattice matching was possible and high quality films of Al0.462In0.538AsySb1-y were obtained.