Abstract-Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

Maxim A. Stolyarov¹, Guanxiong Liu¹, Sergey L. Rumyantsev^2,3, Michael Shur² and Alexander A. Balandin^1,a)
http://scitation.aip.org/content/aip/journal/apl/107/2/10.1063/1.4926872?TRACK=RSS
a) Author to whom correspondence should be addressed. Electronic mail: balandin@ee.ucr.edu
Appl. Phys. Lett. 107, 023106 (2015); http://dx.doi.org/10.1063/1.4926872

We have investigated low-frequency 1/f noise in the boron nitride–graphene–boron nitrideheterostructure field-effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from ∼30 000 to ∼36 000 cm²/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to ∼5 × 10⁻⁹ μm²Hz⁻¹, which is a factor of ×5 – ×10 lower than that in non-encapsulated graphene devices on Si/SiO2. The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO2 gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.