Abstract-Terahertz photon-electron pump effect and Fano-like resonance in the two-level InAs quantum dot

X. Zhao¹, R.-Y. Yuan^1,a), A.-C. Ji¹, H. Yan² and Y. Guo^3,4
http://scitation.aip.org/content/aip/journal/jap/116/10/10.1063/1.4895341
1 Department of Physics, Center for Theoretical Physics, Capital Normal University, Beijing 100048, China
2 Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022, China
3 Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
4 Collaborative Innovation of Quantum Matter, Beijing 100084, China
a) Electronic address: yuanry@cnu.edu.cn
J. Appl. Phys. 116, 103517 (2014); http://dx.doi.org/10.1063/1.4895341

In this work, with the completely asymmetric terahertz (THz) irradiation, electron transportthrough a two-level InAs quantum dot is theoretically discussed. The Coulomb interaction in this system is compared with the energy difference between the two energy levels and is finite contrasted with the Microwave Field system. We investigate the average current trend with the change of Coulomb interaction and the THz irradiation strength. Our results reveal that there exists the photon-electron pump effect at the Coulomb interaction related energy level, and demonstrate Fano-like resonance in the low THz field strength due to the presence of thephoton induced excited state resonance. We also find that the Fano-like resonance can be suppressed with increasing the temperature.