Abstract -Thermal stability of metal Ohmic contacts in indium gallium zinc oxide transistors using a graphene barrier layer

Jeong Eun Lee¹, Bhupendra K. Sharma², Seoung-Ki Lee¹, Haseok Jeon¹, Byung Hee Hong³, HoLeeo-Jeong¹, and Jong-Hyun Ahn²

¹School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
²School of Electrical & Electronic Engineering, Yonsei University, Seoul 120-749, Korea
³Department of Chemistry, Seoul National University, Seoul 151-747, Korea 

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The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact.

© 2013 American Institute of Physics