Abstract-Strong and narrowband terahertz radiation from GaAs based pHEMT and terahertz imaging

Se‐Mi Kim, Sung‐Min Hong, Jae‐Hyung Jang,

https://onlinelibrary.wiley.com/doi/abs/10.1002/mop.32525

Strong and narrowband terahertz (THz) radiation is obtained from a GaAs‐based pseudomorphic high‐electron‐mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is measured to be 63 and 278 μW at room temperature and 77 K, respectively. By using the THz radiation from the pHEMT, a metal object hidden in cloth was successfully imaged.