Abstract-Terahertz read-only multi-order nonvolatile rewritable photo-memory based on indium oxide nanoparticles

Applied Physics Letters

Hongyu Ji, Wei Wang, Luyao Xiong, Dandan Liu, Longfeng Lv, Bo Zhang, Jingling Shen,

(a) Schematic of the terahertz time-domain spectroscopy (THz-TDS) system. (b) Absorption spectrum and scanning electron microscopy (SEM) image of the indium oxide sample

https://aip.scitation.org/doi/abs/10.1063/1.5051029

We investigate terahertz (THz) read-only multi-order nonvolatile rewritable photo-memory based on indium oxide (In2O3) nanoparticles. Optical excitation of an In2O3/quartz sample increases its conductivity, which attenuates its THz transmission. When the optical excitation is terminated, the modulated THz transmission can recover back to its original value in air. However, the THz transmission shows no obvious change over a long-term when In2O3/quartz is encapsulated in an inert gas (nitrogen). Multi-order nonvolatile digital information storage is obtained at different light intensities, and the photo-memory can be rewritten after thermal annealing. Different THz transmissions are used as coded signal units, which are programmed to store information. These results show that THz read-only multi-level nonvolatile rewritable photo-memory can be realized.