A repository & source of cutting edge news about emerging terahertz technology, it's commercialization & innovations in THz devices, quality & process control, medical diagnostics, security, astronomy, communications, applications in graphene, metamaterials, CMOS, compressive sensing, 3d printing, and the Internet of Nanothings. NOTHING POSTED IS INVESTMENT ADVICE! REPOSTED COPYRIGHT IS FOR EDUCATIONAL USE.
Pages- Terahertz Imaging & Detection
▼
Saturday, October 13, 2018
Abstract-Nanostructured epitaxial graphene for ultra-broadband optoelectronic detectors (Conference Presentation)
Abdel El Fatimy, Luke St. Marie, Anindya Nath, Byoung Don Kong, Anthony K. Boyd, Rachael L. Myers-Ward, Kevin M. Daniels, M. Mehdi Jadidi, Thomas E. Murphy, D. Kurt Gaskill, Paola Barbara
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10729/1072906/Nanostructured-epitaxial-graphene-for-ultra-broadband-optoelectronic-detectors-Conference-Presentation/10.1117/12.2321313.short
Atomically thin materials like semimetallic graphene and semiconducting transition metal dichalcogenides (TMDs) are an ideal platform for ultra-thin optoelectronic devices due to their direct bandgap (for monolayer thickness) and their considerable light absorption. For devices based on semiconducting TMDs, light detection occurs by optical excitation of charge carriers above the bandgap. For gapless graphene, light absorption causes a large increase in electron temperature, because of its small electronic heat capacity and weak electron-phonon coupling, making it suitable for hot-electron detectors. Here we show that, by nanostructuring graphene into quantum dots, we can exploit quantum confinement to achieve hot-electron bolometric detection. The graphene quantum dots are patterned from epitaxial graphene on SiC, with dot diameter ranging from 30 nm to 700 nm [1]. Nanostructuring greatly increases the temperature dependence of the electrical resistance, yielding detectors with extraordinary performance (responsivities of 1 × 10^(10) V W^(−1) and electrical noise-equivalent power, ∼2 × 10^(−16) W Hz^(−1/2) at 2.5 K). We will discuss how the dynamics of the charge carriers, namely the hot-electron cooling, affects the device operation and its power dependence. These detectors work in a very broad spectral range, from terahertz through telecom to ultraviolet radiation [2], with a design that is easily scalable for detector arrays. [1] El Fatimy, A. et al. , "Epitaxial graphene quantum dots for high-performance terahertz bolometers," Nature Nanotechnology 11, 335-338 (2016). [2] El Fatimy, A. et al. , "Ultra-broadband photodetectors based on epitaxial graphene quantum dots" Nanophotonics (2018).
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
No comments:
Post a Comment
Please share your thoughts. Leave a comment.