Abstract-Engineering semiconductor nanowires for photodetection: from visible to terahertz

Hannah J. Joyce,  Jack Alexander-Webber, Kun Peng,  Michael B. Johnston, Patrick Parkinson,  H. Hoe Tan, C. Jagadish

https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10729/1072909/Engineering-semiconductor-nanowires-for-photodetection-from-visible-to-terahertz/10.1117/12.2320715.short

III–V semiconductor nanowires combine the properties of III–V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III–V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.